Fabrication of quantum well infrared photodetectors using chemically wet-etched grid nanostructures

被引:1
|
作者
Jeong, H [1 ]
机构
[1] Hanyang Univ, Dept Appl Phys, Ansan 426791, South Korea
关键词
quantum well; QWIP; wet etching; lateral quantization; GaAs;
D O I
10.1143/JJAP.44.1123
中图分类号
O59 [应用物理学];
学科分类号
摘要
Quantum well infrared photodetectors were fabricated using a chemical wet etching method, defined on a GaAs/AlGaAs heterostructure. These devices utilized grid nanostructures for effective light coupling through the diffraction effect. By reducing grid widths close to the depletion of the quantum well, we observed a systematic increase in the normalized responsivity of the photodetectors, as a possible signature of the quantum size effect, with blue shift. We also achieved precise control of grid widths through wet etching that does not require an expensive processing instrument.
引用
收藏
页码:1123 / 1127
页数:5
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