Clarification of the GaP(001)(2x4) Ga-rich reconstruction by scanning tunneling microscopy and ab initio theory

被引：25
|
作者：
Lüdge, K
Vogt, P
Pulci, O
Esser, N
Bechstedt, F
Richter, W
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Univ Jena, Inst Festkorperphys & Theoret Opt, D-07743 Jena, Germany
来源：
PHYSICAL REVIEW B | 2000年 / 62卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.62.11046
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We infer the structure of the GaP(001)(2x4) surface from a study of scanning tunneling microscopy (STM) images obtained under UHV conditions on metal-organic vapor phase epitaxy grown samples. STM images are compared with results of first-principles calculations for models energetically most favorable under Ga-rich growth conditions. The comparison shows that the GaP(001)(2x4) surface unit cell consists of a mixed Ga-P dimer on top of a complete gallium layer, hence ruling out the Cia-Ga dimer model.
引用
收藏
页码：11046 / 11049
页数：4
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