Clarification of the GaP(001)(2x4) Ga-rich reconstruction by scanning tunneling microscopy and ab initio theory

被引：25
|
作者：
Lüdge, K
Vogt, P
Pulci, O
Esser, N
Bechstedt, F
Richter, W
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Univ Jena, Inst Festkorperphys & Theoret Opt, D-07743 Jena, Germany
来源：
PHYSICAL REVIEW B | 2000年 / 62卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.62.11046
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We infer the structure of the GaP(001)(2x4) surface from a study of scanning tunneling microscopy (STM) images obtained under UHV conditions on metal-organic vapor phase epitaxy grown samples. STM images are compared with results of first-principles calculations for models energetically most favorable under Ga-rich growth conditions. The comparison shows that the GaP(001)(2x4) surface unit cell consists of a mixed Ga-P dimer on top of a complete gallium layer, hence ruling out the Cia-Ga dimer model.
引用
收藏
页码：11046 / 11049
页数：4
相关论文
共 50 条
  • [21] Scanning tunneling microscopy study of the evolution of the GaAs(001) surface during the (2X4)-(4X2) phase transition
    Chizhov, I
    Lee, G
    Willis, RF
    Lubyshev, D
    Miller, DL
    APPLIED SURFACE SCIENCE, 1998, 123 : 192 - 198
  • [22] Localized excess negative charges in surface states of the clean Ga-rich GaAs(100)c(8x2)/4x2 reconstruction as imaged by scanning tunneling microscopy
    Kruse, P
    McLean, JG
    Kummel, AC
    JOURNAL OF CHEMICAL PHYSICS, 2000, 113 (06): : 2060 - 2063
  • [23] Submonolayer Si deposition at low temperatures on the GaAs(001)-(2x4) surface studied by scanning tunneling microscopy
    Wassermeier, H
    Kellermann, S
    Behrend, J
    Daweritz, L
    Ploog, K
    SURFACE SCIENCE, 1998, 414 (1-2) : 298 - 303
  • [24] ARSENIC-DEFICIENT GAAS(001)-(2X4) SURFACES - SCANNING-TUNNELING-MICROSCOPY EVIDENCE FOR LOCALLY DISORDERED (1X2) GA REGIONS
    AVERY, AR
    HOLMES, DM
    JONES, TS
    JOYCE, BA
    BRIGGS, GAD
    PHYSICAL REVIEW B, 1994, 50 (11): : 8098 - 8101
  • [25] THEORETICAL SIMULATION OF SCANNING-TUNNELING-MICROSCOPY IMAGES OF THE GAAS(001) BETA(2X4) AND BETA(4X2) SURFACES
    BASS, JM
    MATTHAI, CC
    PHYSICAL REVIEW B, 1994, 50 (15): : 11212 - 11215
  • [26] INTERACTION OF SELENIUM WITH THE GAAS(001)-(2X4)/C(2X8) SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY
    LI, D
    PASHLEY, MD
    PHYSICAL REVIEW B, 1994, 49 (19): : 13643 - 13649
  • [27] Scanning tunneling microscopy and ab initio studies of precursor states of Ga-induced cluster on Si(001) surface
    Hara, Shinsuke
    Kobayashi, Hidekazu
    Ota, Kohei
    Nagura, Yuichiro
    Irokawa, Katsumi
    Fujishiro, Hiroki Inomata
    Watanabe, Kazuyuki
    Miki, Hirofumi
    Kawazu, Akira
    SURFACE SCIENCE, 2009, 603 (01) : 183 - 189
  • [28] Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2x8)/(2x4)
    Hale, MJ
    Yi, SI
    Sexton, JZ
    Kummel, AC
    Passlack, M
    JOURNAL OF CHEMICAL PHYSICS, 2003, 119 (13): : 6719 - 6728
  • [29] Monte Carlo derived diffusion parameters for Ga on the GaAs(001)-(2x4) surface: A molecular beam epitaxy-scanning tunneling microscopy study
    LaBella, VP
    Bullock, DW
    Ding, Z
    Emery, C
    Harter, WG
    Thibado, PM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04): : 1526 - 1531
  • [30] Reconstruction phase transition α(2x4)⟨-⟩β(2x4) on (001) GaAs surface
    Dmitriev, DV
    Galitsyn, YG
    Mansurov, VG
    Toropov, AI
    EDM 2005: INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS, 2005, : 32 - 33
12345