Surface plasmon leakage in its coupling with an InGaN/GaN quantum well through an Ohmic contact

被引：0

作者：

Yeh, Dong-Ming ^{[1
]}

Huang, Chi-Feng ^{[1
]}

Lu, Yen-Cheng ^{[1
]}

Chen, Cheng-Yen ^{[1
]}

Tang, Tsung-Yi ^{[1
]}

Huang, Jeng-Jie ^{[1
]}

Shen, Kun-Ching ^{[1
]}

Yang, Ying-Jay ^{[1
]}

Yang, C. C. ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10764, Taiwan

来源：

2007 IEEE/LEOS INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS | 2007年

关键词：

surface plasmon; quantum well; Ohmic contact;

D O I：

10.1109/OMEMS.2007.4373872

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the loss of surface plasmon (SP) energy through oscillating electron leakage via the Ohmic contact of either p-type or n-type GaN layer in the coupling process between SP and an InGaN/GaN quantum well (QW). The observation implies that in using the SP-QW coupling for enhancing emission in a light-emitting diode, the metals for Ohmic contact and SP generation must be separated. A thin dielectric interlayer is required in the region for SP-QW coupling to avoid the leakage of SP energy.

引用

页码：125 / 126

页数：2

共 50 条

[1] Surface plasmon leakage in its coupling with an InGaN/GaN quantum well through an Ohmic contact
Yeh, Dong-Ming
Huang, Chi-Feng
Lu, Yen-Cheng
Chen, Cheng-Yen
Tang, Tsung-Yi
Huang, Jeng-Jie
Shen, Kun-Ching
Yang, Ying-Jay
Yang, C. C.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (06)
[2] Temperature dependence of the surface plasmon coupling with an InGaN/GaN quantum well
Lu, Yen-Cheng
Chen, Cheng-Yen
Yeh, Dong-Ming
Huang, Chi-Feng
Tang, Tsung-Yi
Huang, Jeng-Jie
Yang, C. C.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (19)
[3] Coupling Behaviors of Surface Plasmon Polariton and Localized Surface Plasmon with an InGaN/GaN Quantum Well
Chia-Ying Su
Chun-Han Lin
Pei-Ying Shih
Chieh Hsieh
Yu-Feng Yao
Charng-Gan Tu
Hao-Tsung Chen
Horng-Shyang Chen
Yean-Woei Kiang
C. C. Yang
[J]. Plasmonics, 2016, 11 : 931 - 939
[4] Coupling Behaviors of Surface Plasmon Polariton and Localized Surface Plasmon with an InGaN/GaN Quantum Well
Su, Chia-Ying
Lin, Chun-Han
Shih, Pei-Ying
Hsieh, Chieh
Yao, Yu-Feng
Tu, Charng-Gan
Chen, Hao-Tsung
Chen, Horng-Shyang
Kiang, Yean-Woei
Yang, C. C.
[J]. PLASMONICS, 2016, 11 (03) : 931 - 939
[5] Enhanced Photoluminescence Excitation in Surface Plasmon Coupling with an InGaN/GaN Quantum Well
Lu, Yen-Cheng
Chen, Cheng-Yen
Shen, Kun-Ching
Yeh, Dong-Ming
Tang, Tsung-Yi
Yang, C. C.
[J]. 2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 2113 - 2114
[6] Enhanced photoluminescence excitation in surface plasmon coupling with an InGaN/GaN quantum well
Lu, Yen-Cheng
Chen, Cheng-Yen
Shen, Kun-Ching
Yeh, Dong-Ming
Tang, Tsung-Yi
Yang, C. C.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (18)
[7] Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample
Wang, Hsiang-Chen
Yu, Xuan-Yu
Chueh, Yu-Lun
Malinauskas, Tadas
Jarasiunas, Kestutis
Feng, Shih-Wei
[J]. OPTICS EXPRESS, 2011, 19 (20): : 18893 - 18902
[8] Temperature-dependent behaviors of the surface plasmon coupling with an InGaN/GaN quantum well
Lu, Yen-Cheng
Chen, Cheng-Yen
Yeh, Dong-Ming
Huang, Chi-Feng
Tang, Tsung-Yi
Huang, Jeng-Jie
Yang, C. C.
[J]. 2007 IEEE/LEOS INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS, 2007, : 127 - 128
[9] Improved Surface Plasmon Coupling with an InGaN/GaN Quantum Well for More Effective Emission Enhancement
Lu, Yen-Cheng
Tsai, Fu-Ji
Wang, Jyh-Yang
Lin, Cheng-Hung
Shen, Kun-Ching
Chen, Cheng-Yen
Lu, Chih-Feng
Kiang, Yean-Woei
Yang, C. C.
[J]. 2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, : 284 - 285
[10] Influence of the quantum-confined Stark effect in an InGaN/GaN quantum well on its coupling with surface plasmon for light emission enhancement
Chen, Cheng-Yen
Lu, Yen-Cheng
Yeh, Dong-Ming
Yang, C. C.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (18)

← 1 2 3 4 5 →