Heterojunction Effect in Weak Epitaxy Growth Thin Films Investigated by Kelvin Probe Force Microscopy

被引：6
|
作者：
Huang Hai-Chao [1 ,2 ]
Wang Hai-Bo [1 ,2 ]
Yan Dong-Hang [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2010年 / 27卷 / 08期
基金：
中国国家自然科学基金;
关键词：
P-SEXIPHENYL MONOLAYER; TRANSISTORS; MOBILITY; SIZE;
D O I：
10.1088/0256-307X/27/8/086801
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigate the heterojunction effect between para-sexiphenyl (p-6P) and copper phthalocyanine (CuPc) using Kelvin probe force microscopy. CuPc films are grown on the inducing layer p-6P by a weak epitaxy growth technique. The surface potential images of Kelvin probe force microscopy indicate the band bending in CuPc, which reduces grain boundary barriers and lead to the accumulation of holes in the CuPc layer. The electrical potential distribution on the surface of heterojunction films shows negligible grain boundary barriers in the CuPc layers. The relation between band bending and grain boundary barrier in the weak epitaxy growth thin films is revealed.
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页数：3
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