The Optimization of 3.3 kV 4H-SiC JBS Diodes

被引：0

作者：

Renz, Arne Benjamin ^{[1
]}

Shah, Vishal Ajit ^{[1
]}

Vavasour, Oliver James ^{[1
]}

Baker, Guy William Clarke ^{[1
]}

Bonyadi, Yegi ^{[2
]}

Sharma, Yogesh ^{[3
]}

Pathirana, Vasantha ^{[4
]}

Trajkovic, Tanya ^{[4
]}

Mawby, Phil ^{[1
]}

Antoniou, Marina ^{[1
]}

Gammon, Peter Michael ^{[1
]}

机构：

[1] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

[2] Lyra Elect Ltd, Wellesbourne CV35 9EF, Warwick, England

[3] Bosch AG, D-72762 Reutlingen, Germany

[4] Cambridge Microelect Ltd, Cambridge CV23 6DP, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 01期

基金：

英国工程与自然科学研究理事会; “创新英国”项目;

关键词：

JBS diodes; Mo; Ni; Schottky diodes; silicon carbide; termination design; Ti; SCHOTTKY CONTACTS;

D O I：

10.1109/TED.2021.3129705

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The article reports a comprehensive study optimizing the OFF- and ON-state characteristics of 3.3 kV junction barrier Schottky (JBS) diodes made using nickel, titanium, and molybdenum contact metals. In this design, the same implants used in the optimized termination region are used to form the P-regions in the JBS active area. The width and spacing of the P-regions are varied to optimize both the ON- and OFF-state of the device. All the diodes tested displayed high blocking voltages and ideal turn-on characteristics up to the rated current of 2 A. However, the leakage current and the Schottky barrier height (SBH) were found to scale with the ratio of Schottky to p(+) regions. Full Schottkys, without p(+) regions, and those with very wide Schottky regions had the lowest SBH (1.61 eV for Ni, 1.11 eV for Mo, and 0.87 eV for Ti) and the highest leakage. Those diodes with the lowest Schottky openings of 2 mu m had the lowest OFF-state leakage, but they suffered severe pinching from the surrounding p(+) regions, increasing their SBH. The best performingJBS diodeswere Ni andMo deviceswith the narrowest pitch, with the p(+) implants/Schottky regions both 2 mu m wide. These offered the best balanced device design, with excellent OFF-state performance, while the Schottky ratio guaranteed a relatively low forward voltage drop.

引用

页码：298 / 303

页数：6

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