Structural and Electrical properties of P Doped ZnO Films

Structural, electronic and electrical properties of Phosphorus doped ZnO thin films deposited using pulsed laser deposition technique, on P-type Si (111) substrate are studied. X-ray diffraction measurements shows that undoped ZnO and Phosphorus doped ZnO films oriented along c-axis and maintains wurtzite crystalline symmetry. The change in grain size occurs by Phosphorus doping, which can be correlated to stress comes due to presence of Phosphorus. The changes in electronic structure has been observed by Phosphorus doping in ZnO thin films, which is understood from X-ray absorption spectroscopy. Hall measurements shows n-type behavior of Phosphorus doped ZnO samples.