Effect of dopant concentration on the structural, electrical and optical properties of Mn-doped ZnO films

被引：42
|
作者：
Ruan, H. B. [1 ,2 ]
Fang, L. [1 ]
Li, D. C. [1 ]
Saleem, M. [1 ]
Qin, G. P. [2 ]
Kong, C. Y. [2 ]
机构：
[1] Chongqing Univ, Dept Appl Phys, Chongqing 400030, Peoples R China
[2] Chongqing Normal Univ, Opt Engn Key Lab, Chongqing 400047, Peoples R China
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 15期
基金：
中国国家自然科学基金;
关键词：
Mn-doped ZnO; Magnetron sputtering; Dopant concentration; Optical property; Electrical property; FERROMAGNETISM; EMISSION;
D O I：
10.1016/j.tsf.2011.01.132
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Mn-doped ZnO (Zn1-xMnxO) thin films with manganese compositions in the range of 0-8 at.% were deposited by radio-frequency (RF) magnetron sputtering on quartz glass substrates at room temperature (RT). The influence of Mn concentration on the structural, electrical and optical properties of Zn1-xMnxO films has been investigated. X-ray diffraction (XRD) measurements reveal that all the films are single phase and have wurtzite structure with (002) c-axis orientation. The chemical states of Mn have been identified as the divalent state of Mn2+ ions in ZnO lattice. As the content of Mn increases, the c-lattice constant and the optical band gap of the films increase while the crystalline quality deteriorates gradually. Hall-effect measurements reveal that all the films are n-type and the conductivity of the films has a severe degradation with Mn content. It is also found that the intensity of RT photoluminescence spectra (PL) is suppressed and saturates with Mn doping. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：5078 / 5081
页数：4
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