On-chip decoupling capacitor optimization for noise and leakage reduction

被引:17
|
作者
Chen, HH [1 ]
Neely, JS [1 ]
Wang, MF [1 ]
Co, G [1 ]
机构
[1] IBM Corp, Yorktown Hts, NY 10598 USA
关键词
D O I
10.1109/SBCCI.2003.1232837
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The on-chip decoupling capacitors are widely used in today's high-performance microprocessor design to mitigate the power supply noise problem. The continued reduction of oxide thickness in advanced nanotechnology, however, also significantly increases the tunneling current and leakage power of thin-oxide capacitors. This paper describes the modeling and simulation of a complete chip and package power supply distribution network, and the optimization of the placement of thinoxide and thick-oxide capacitors to reduce the tunneling current, leakage power, and burn-in cost, while limiting the power supply noise within noise margin.
引用
收藏
页码:251 / 255
页数:5
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