The slow positron beam technique -: A unique tool for the study of vacancy-type defects in semiconductors

被引：2

作者：

Krause-Rehberg, R ^{[1
]}

Eichler, S ^{[1
]}

Gebauer, J ^{[1
]}

Börner, F ^{[1
]}

机构：

[1] Univ Halle Wittenberg, Fachbereich Phys, DE-06099 Halle, Germany

来源：

SOLID STATE PHENOMENA | 1998年 / 63-4卷

关键词：

defect characterization; positron annihilation; VEPAS; ion implantation; LT-GaAs;

D O I：

10.4028/www.scientific.net/SSP.63-64.291

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Positron annihilation has been established as a unique tool for the identification of open-volume defects in semiconductors. In particular, the slow-positron beam technique allows the characterization of defects in the near-surface region and in thin epitaxial layers. This ability is demonstrated with the help of three examples: ion-implantation induced defects in silicon, defect-rich low-temperature-grown (LT) GaAs layers, and near-surface defects introduced by saw-cutting of GaAs wafers by a diamond wheel.

引用

页码：291 / 300

页数：10

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