The slow positron beam technique -: A unique tool for the study of vacancy-type defects in semiconductors

被引：2
|
作者：
Krause-Rehberg, R [1 ]
Eichler, S [1 ]
Gebauer, J [1 ]
Börner, F [1 ]
机构：
[1] Univ Halle Wittenberg, Fachbereich Phys, DE-06099 Halle, Germany
来源：
SOLID STATE PHENOMENA | 1998年 / 63-4卷
关键词：
defect characterization; positron annihilation; VEPAS; ion implantation; LT-GaAs;
D O I：
10.4028/www.scientific.net/SSP.63-64.291
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Positron annihilation has been established as a unique tool for the identification of open-volume defects in semiconductors. In particular, the slow-positron beam technique allows the characterization of defects in the near-surface region and in thin epitaxial layers. This ability is demonstrated with the help of three examples: ion-implantation induced defects in silicon, defect-rich low-temperature-grown (LT) GaAs layers, and near-surface defects introduced by saw-cutting of GaAs wafers by a diamond wheel.
引用
收藏
页码：291 / 300
页数：10
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