Electron emission from ferroelectric thin films enhanced by the presence of ferroelectric domains

被引：1

作者：

Suchaneck, G. ^{[1
]}

Vidyarthi, V. S. ^{[1
]}

Milde, G. ^{[1
]}

Gerlach, G. ^{[1
]}

Solnyshkin, A. V. ^{[3
]}

Kislova, I. L. ^{[4
]}

Otto, T.

Reichenbach, R.

Klumbies, H.

Mieth, O. ^{[2
]}

Eng, L. M. ^{[2
]}

机构：

[1] Tech Univ Dresden, Inst Festkorperelekt, D-01062 Dresden, Germany

[2] Tech Univ Dresden, Inst Angewandte Photophys, D-01062 Dresden, Germany

[3] Tver State Tech Univ, Dept Phys Ferroelect & Piezoelect, Tver 170002, Russia

[4] Tver State Tech Univ, Dept Informat Sci & Appl Math, Tver 170001, Russia

来源：

2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/ISAF.2007.4393261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work ferroelectric domain enhanced electron emission mechanisms are proposed. The polarization distribution near 901 domain walls is calculated by solving a set of second order differential equations including the Poisson's one and equations derived from an expansion of the free energy (D(P) in power series of the polarization according to the Devonshire-Landau-Ginzburg theory. Domain walls intersecting the emitting surface cause sufficient electric fields and lower the potential barrier for electron emission. This induces centers of enhanced electron emission. Relaxing domain walls were found to excitate trapped excess electrons in front of the wall.

引用

页码：346 / +

页数：2

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