Electron emission from ferroelectric thin films enhanced by the presence of ferroelectric domains

被引：1
|
作者：
Suchaneck, G. [1 ]
Vidyarthi, V. S. [1 ]
Milde, G. [1 ]
Gerlach, G. [1 ]
Solnyshkin, A. V. [3 ]
Kislova, I. L. [4 ]
Otto, T.
Reichenbach, R.
Klumbies, H.
Mieth, O. [2 ]
Eng, L. M. [2 ]
机构：
[1] Tech Univ Dresden, Inst Festkorperelekt, D-01062 Dresden, Germany
[2] Tech Univ Dresden, Inst Angewandte Photophys, D-01062 Dresden, Germany
[3] Tver State Tech Univ, Dept Phys Ferroelect & Piezoelect, Tver 170002, Russia
[4] Tver State Tech Univ, Dept Informat Sci & Appl Math, Tver 170001, Russia
来源：
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/ISAF.2007.4393261
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work ferroelectric domain enhanced electron emission mechanisms are proposed. The polarization distribution near 901 domain walls is calculated by solving a set of second order differential equations including the Poisson's one and equations derived from an expansion of the free energy (D(P) in power series of the polarization according to the Devonshire-Landau-Ginzburg theory. Domain walls intersecting the emitting surface cause sufficient electric fields and lower the potential barrier for electron emission. This induces centers of enhanced electron emission. Relaxing domain walls were found to excitate trapped excess electrons in front of the wall.
引用
收藏
页码：346 / +
页数：2
相关论文
共 50 条
  • [21] Investigation of ferroelectric domains in thin films of vinylidene fluoride oligomers
    Sharma, Pankaj
    Poddar, Shashi
    Korlacki, Rafal
    Ducharme, Stephen
    Gruverman, Alexei
    APPLIED PHYSICS LETTERS, 2014, 105 (02)
  • [22] Interface-induced nonswitchable domains in ferroelectric thin films
    Myung-Geun Han
    Matthew S.J. Marshall
    Lijun Wu
    Marvin A. Schofield
    Toshihiro Aoki
    Ray Twesten
    Jason Hoffman
    Frederick J. Walker
    Charles H. Ahn
    Yimei Zhu
    Nature Communications, 5
  • [23] Ferroelectric domains in thin films and superlattices: Results of numerical modeling
    De Guerville, F.
    El Marssi, M.
    Lukyanchuk, I.
    Lahoche, L.
    FERROELECTRICS, 2007, 359 : 14 - +
  • [24] The impact of domains on the dielectric and electromechanical properties of ferroelectric thin films
    Trolier-McKinstry, S
    Aungkavattana, P
    Chu, F
    Lacey, J
    Maria, JP
    Shepard, JF
    Su, T
    Xu, F
    FERROELECTRIC THIN FILMS VI, 1998, 493 : 59 - 68
  • [25] Stability diagram for elastic domains in epitaxial ferroelectric thin films
    Pertsev, NA
    Emelyanov, AY
    PHYSICS OF THE SOLID STATE, 1997, 39 (01) : 109 - 115
  • [26] Ferroelectric thin films
    Zhang, Jialan
    AMERICAN CERAMIC SOCIETY BULLETIN, 2010, 89 (05): : 33 - 34
  • [27] Charged domains in ferroelectric, polycrystalline yttrium manganite thin films resolved with scanning electron microscopy
    Rayapati, Venkata Rao
    Buerger, Danilo
    Du, Nan
    Kowol, Cornelia
    Blaschke, Daniel
    Stoecker, Hartmut
    Matthes, Patrick
    Patra, Rajkumar
    Skorupa, Ilona
    Schulz, Stefan E.
    Schmidt, Heidemarie
    NANOTECHNOLOGY, 2020, 31 (31)
  • [28] Enhanced electrical properties in bilayered ferroelectric thin films
    Zhang Hao
    Long WeiJie
    Chen YaQing
    Guo DongJie
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2013, 56 (03) : 551 - 555
  • [29] Enhanced electrical properties in bilayered ferroelectric thin films
    Hao Zhang
    WeiJie Long
    YaQing Chen
    DongJie Guo
    Science China Physics, Mechanics and Astronomy, 2013, 56 : 551 - 555
  • [30] Enhanced electrical properties in bilayered ferroelectric thin films
    ZHANG Hao
    LONG WeiJie
    CHEN YaQing
    GUO DongJie
    Science China(Physics,Mechanics & Astronomy), 2013, (03) : 551 - 555
12345