Spectroscopic ellipsometry: Application to complex optoelectronic layer systems

被引:0
|
作者
Rheinlander, B [1 ]
Schubert, M [1 ]
Schmidt, H [1 ]
机构
[1] Univ Leipzig, Fac Phys & Geosci, Dept Semicond, D-04103 Leipzig, Germany
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:151 / 154
页数:4
相关论文
共 50 条
  • [31] Spectroscopic ellipsometry
    Keefer, Mark E.
    King, Christopher
    Lasers and Optronics, 1997, 16 (07): : 31 - 33
  • [32] Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy
    Postava, K.
    Gao, Y. Z.
    Gong, X. Y.
    Halagacka, L.
    Pistora, J.
    Nakaoka, A.
    Yamaguchi, T.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 5, 2008, 5 (05): : 1316 - +
  • [33] Spectroscopic ellipsometry of layer by layer deposited colloidal HgTe nanocrystals exhibiting quantum confinement
    Rinnerbauer, V
    Kovalenko, M
    Lavchiev, V
    Kocher, G
    Roither, J
    Heiss, W
    Hingerl, K
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2): : 104 - 107
  • [34] Solution of the Inverse Spectroscopic Ellipsometry Problem for an Absorbing Substrate with a Dielectric Layer
    Stas'kov, N. I.
    Shulga, A. V.
    JOURNAL OF APPLIED SPECTROSCOPY, 2016, 83 (01) : 40 - 46
  • [35] Determination of Mean Thickness of an Oxide Layer on a Silicon Sphere by Spectroscopic Ellipsometry
    Zhang Ji-Tao
    Li Yan
    Luo Zhi-Yong
    Wu Xue-Jian
    CHINESE PHYSICS LETTERS, 2010, 27 (05)
  • [36] Investigation of thin Al layer growth with in situ infrared spectroscopic ellipsometry
    Hausmann, A
    Weidner, G
    Weidner, M
    Ritter, G
    THIN SOLID FILMS, 1998, 318 (1-2) : 124 - 127
  • [37] Single-layer films of organic compounds studied by spectroscopic ellipsometry
    Paulsone, P.
    Aulika, I.
    Butikova, J.
    Maurucaite, A.
    Stucere, K. A.
    Vembris, A.
    ORGANIC ELECTRONICS AND PHOTONICS: FUNDAMENTALS AND DEVICES IV, 2024, 13013
  • [38] Spectroscopic ellipsometry study of a self-organized Ge dot layer
    Gallas, B
    Rivory, J
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) : 2248 - 2253
  • [39] In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition
    Langereis, E.
    Heil, S. B. S.
    Knoops, H. C. M.
    Keuning, W.
    van de Sanden, M. C. M.
    Kessels, W. M. M.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (07)
  • [40] Solution of the Inverse Spectroscopic Ellipsometry Problem for an Absorbing Substrate with a Dielectric Layer
    N. I. Stas’kov
    A. V. Shulga
    Journal of Applied Spectroscopy, 2016, 83 : 40 - 46