Positive temperature coefficient resistor behavior in praseodymium-doped ZnO (000(1)over-bar) | (000(1)over-bar) boundaries

被引：3
|
作者：
Lee, Jong-Sook [1 ]
Kim, Yong [1 ]
Shin, Eui-Chol [1 ]
Maier, Joachim [2 ]
机构：
[1] Chonnam Natl Univ, Sch Mat Sci & Engn, Kwangju 500777, South Korea
[2] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 20期
关键词：
bicrystals; cobalt; deep levels; II-VI semiconductors; praseodymium; Schottky barriers; wide band gap semiconductors; zinc compounds; ADMITTANCE SPECTROSCOPY; VOLTAGE CHARACTERISTICS;
D O I：
10.1063/1.3432444
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Clear positive temperature coefficient resistor (PTCR) dc behavior has been shown in Pr-doped ZnO (000 (1) over bar) vertical bar (000 (1) over bar) bicrystals by electrical characterization over an unprecedentedly wide temperature range between 40 and 1070 K. With subtraction of the PTCR dc, the admittance can be described by a deep trap level at 0.26 eV but no clue to the origin of the PTCR behavior is provided. Capacitance-voltage characteristics revealed a maximum in the Schottky barrier heights consistent with the PTCR behavior. The PTCR behavior in Pr-doped ZnO c-axis oriented bicrystals is thus phenomenologically analogous to that of the ferroelectric BaTiO3. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3432444]
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Adatom diffusion at GaN (0001) and (000(1)over-bar) surfaces
    Zywietz, T
    Neugebauer, J
    Scheffler, M
    APPLIED PHYSICS LETTERS, 1998, 73 (04) : 487 - 489
  • [32] The structure of graphene grown on the SiC (000(1)over-bar) surface
    Hicks, J.
    Shepperd, K.
    Wang, F.
    Conrad, E. H.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (15)
  • [33] Scanning tunneling microscopy of the GaN(000(1)over-bar) surface
    Smith, AR
    Feenstra, RM
    Greve, DW
    Neugebauer, J
    Northrup, JE
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 : S947 - S951
  • [34] A kinetic study of structured surface relief patterning of GaP ((1)over-bar(1)over-bar(1)over-bar)
    Berdinskikh, T
    Ruda, HE
    Mei, XY
    Buchanan, M
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (03) : 114 - 121
  • [35] N-plasma assisted molecular beam epitaxy of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar)
    Xue, QZ
    Xue, QK
    Kuwano, S
    Nakayama, K
    Sakurai, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (6B): : 4388 - 4390
  • [36] Growth nuclei and surface defects on GaAs((1)over-bar(1)over-bar(3)over-bar)B
    Suzuki, T
    Temko, Y
    Jacobi, K
    SURFACE SCIENCE, 2002, 511 (1-3) : 13 - 22
  • [37] Self-assembled InAs islands on GaAs ((1)over-bar(1)over-bar(1)over-bar) substrates
    Schujman, SB
    Soss, SR
    Stokes, K
    Schowalter, LJ
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 1029 - 1032
  • [38] Imaging the polar (000(1)over-bar) and non-polar (10(1)over-bar0) surfaces of ZnO with STM
    Parker, TM
    Condon, NG
    Lindsay, R
    Leibsle, FM
    Thornton, G
    SURFACE SCIENCE, 1998, 415 (03) : L1046 - L1050
  • [39] ZnO epitaxy on SiC(000(1)over-bar) substrate: Comparison with ZnO/SiC(0001) heterostructure
    Ashrafi, Almamun
    Aminuzzaman, Mohammod
    APPLIED SURFACE SCIENCE, 2011, 257 (14) : 6191 - 6196
  • [40] STM Luminescence Spectroscopy of Intrinsic Defects in ZnO(000(1)over-bar) Thin Films
    Stavale, Fernando
    Nilius, Niklas
    Freund, Hans-Joachim
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2013, 4 (22): : 3972 - 3976
12345