On-chip Scalable Resonator-based Transducers for Terahertz Dielectric Sensing in SiGe BiCMOS Technology

被引:0
|
作者
Wang, Defu [1 ]
Schmalz, Klaus [1 ]
Bomgraeber, J. [1 ]
Kissinger, Dietmar [1 ,2 ]
机构
[1] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany
[2] Tech Univ Berlin, Einsteinufer 25, D-10587 Berlin, Germany
关键词
BiCMOS; Dielectric sensing; label free; resonator; SiGe; Teraherz (THz); transducer; SENSOR;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents two scalable resonator-based transducers (RBTs) at terahcrtz (THz) frequency range to realise THz spectroscopy for dielectric sensing. First, the design of 0.24 THz RBT is described by scaled a 0.12 THz sensing structures which utilises a wavelength-long closed-ring resonator to place inside of the Coplanar stripline (CPS) to make a high-selective bandpass response and combines with short-ended strips to create the bandstop behavior. Its scattering parameter can have a very large magnitude change and resonance frequency shift for the loaded samples. Next, a ring structure is also presented to implement 0.48 THz sensing by scaled a low frequency RBT, which employs ring resonator with an asymmetrically loaded stubs to perform a high analytic sensitivity and selectivity for loaded samples. Both presented scalable transducers, possessing the high integration capability of silicon circuits, are proved to be the promising employments in THz spectroscopy.
引用
收藏
页码:240 / 242
页数:3
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