Integrated on-chip Ba2Ti9O20 Dielectric Resonator Oscillator in GaAs Technology

被引：1
|
作者：
Freundorfer, A. P. [1 ]
Bijumon, P. V. [1 ]
Sayer, M. [1 ]
机构：
[1] Queens Univ, Dept Elect & Comp Engn, Kingston, ON K7L 3N6, Canada
来源：
2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年
基金：
加拿大自然科学与工程研究理事会;
关键词：
Dielectric resonator oscillators; Ceramics; Dielectric films and Dielectric materials;
D O I：
10.1109/MWSYM.2009.5165894
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report for the first time a 26 GHz K/Ka-band dielectric resonator oscillator (DRO) in 0.8 mu m GaAs MESFET that had the Ba2Ti9O20 dielectric resonator (DR) grown to the surface of the chip at a temperature of 150 degrees C without destroying the devices of the IC. It was compared to a DRO that had a commercially available DR, Ba(Zn1/3Ta2/3)O-3, epoxied to it. The Ba2Ti9O20 DRO had a measured output power power of 5.68dBm at 25.6 GHz and a phase noise of -114 dBc @ 1MHz.
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页码：1105 / +
页数：2
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