Integrated on-chip Ba2Ti9O20 Dielectric Resonator Oscillator in GaAs Technology

被引：1
|
作者：
Freundorfer, A. P. [1 ]
Bijumon, P. V. [1 ]
Sayer, M. [1 ]
机构：
[1] Queens Univ, Dept Elect & Comp Engn, Kingston, ON K7L 3N6, Canada
来源：
2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年
基金：
加拿大自然科学与工程研究理事会;
关键词：
Dielectric resonator oscillators; Ceramics; Dielectric films and Dielectric materials;
D O I：
10.1109/MWSYM.2009.5165894
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report for the first time a 26 GHz K/Ka-band dielectric resonator oscillator (DRO) in 0.8 mu m GaAs MESFET that had the Ba2Ti9O20 dielectric resonator (DR) grown to the surface of the chip at a temperature of 150 degrees C without destroying the devices of the IC. It was compared to a DRO that had a commercially available DR, Ba(Zn1/3Ta2/3)O-3, epoxied to it. The Ba2Ti9O20 DRO had a measured output power power of 5.68dBm at 25.6 GHz and a phase noise of -114 dBc @ 1MHz.
引用
收藏
页码：1105 / +
页数：2
相关论文
共 50 条
  • [41] Fabrication and dielectric properties of phase-pure Ba2Ti9O20 microwave resonators
    Lin, WY
    Gerhardt, RA
    Speyer, RF
    Hackenberger, WS
    Shrout, TR
    SOLID-STATE CHEMISTRY OF INORGANIC MATERIALS, 1997, 453 : 501 - 506
  • [42] Effect of different raw materials on the microwave dielectric properties of Ba2Ti9O20 ceramics
    Varma, MR
    Sreemoolanadhan, H
    Chandrasekaran, V
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2004, 15 (06) : 345 - 349
  • [43] Effect of reaction sintering process on the microwave dielectric properties of Ba2Ti9O20 materials
    Lin, I-Nan
    Chang, Chi-Ben
    Leou, Keh-Chyang
    Cheng, Hsiu-Fung
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2010, 30 (02) : 159 - 163
  • [44] Low-temperature sintering and microwave dielectric characteristics of Ba2Ti9O20 ceramics
    Lee, Jung-A.
    Lee, Joon-Hyung
    Kim, Jeong-Joo
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2006, 26 (10-11) : 2111 - 2115
  • [45] Effects of B2O3 addition on the microwave dielectric properties of Ba2Ti9O20 ceramics
    Lee, YC
    Lee, WH
    Shieu, FS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (03): : 1311 - 1314
  • [46] Synthesis of Ba2Ti9O20 via ethylenediaminetetraacetic acid precursor
    Yebin Xu
    Yanyan He
    Liangbin Wang
    Journal of Materials Research, 2001, 16 : 1195 - 1199
  • [47] A study on CSC-derived Ba2Ti9O20 phase formation and its dielectric property
    Xiao Lou
    Wenjian Weng
    Kui Cheng
    Chenlu Song
    Piyi Du
    Ge Shen
    Gaorong Han
    Journal of Materials Science: Materials in Electronics, 2010, 21 : 416 - 420
  • [48] Metal-insulator-metal capacitors using Ba2Ti9O20 dielectric thin film
    Lim, Jong-Bong
    Jeong, Young Hun
    Nahm, Sahn
    Paik, Jong-Hoo
    Sun, Ho-Jung
    Lee, Hwack-Joo
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2007, 27 (8-9) : 2871 - 2874
  • [49] INFLUENCE OF ADDITIVES ON MICROWAVE DIELECTRIC-PROPERTIES OF BARIUM NANOTITANATE CERAMICS (BA2TI9O20)
    TANDON, RP
    GOYETTE, J
    BOSE, TK
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1995, 14 (19) : 1372 - 1373
  • [50] A study on CSC-derived Ba2Ti9O20 phase formation and its dielectric property
    Lou, Xiao
    Weng, Wenjian
    Cheng, Kui
    Song, Chenlu
    Du, Piyi
    Shen, Ge
    Han, Gaorong
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2010, 21 (04) : 416 - 420
12345