Observation of antiferromagnetic interlayer exchange coupling in a Ga1-xMnxAs/GaAs:Be/Ga1-xMnxAs trilayer structure

被引：28

作者：

Leiner, J. ^{[1
]}

Lee, H. ^{[2
]}

Yoo, T. ^{[2
]}

Lee, Sanghoon ^{[2
]}

Kirby, B. J. ^{[3
]}

Tivakornsasithorn, K. ^{[1
]}

Liu, X. ^{[1
]}

Furdyna, J. K. ^{[1
]}

Dobrowolska, M. ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Korea Univ, Dept Phys, Seoul 136713, South Korea

[3] NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 19期

基金：

美国国家科学基金会;

关键词：

HETEROSTRUCTURES; MULTILAYERS;

D O I：

10.1103/PhysRevB.82.195205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interlayer exchange coupling (IEC) between two Ga0.95Mn0.05As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.

引用

页数：5

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