Observation of antiferromagnetic interlayer exchange coupling in a Ga1-xMnxAs/GaAs:Be/Ga1-xMnxAs trilayer structure

被引：28
|
作者：
Leiner, J. [1 ]
Lee, H. [2 ]
Yoo, T. [2 ]
Lee, Sanghoon [2 ]
Kirby, B. J. [3 ]
Tivakornsasithorn, K. [1 ]
Liu, X. [1 ]
Furdyna, J. K. [1 ]
Dobrowolska, M. [1 ]
机构：
[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
[2] Korea Univ, Dept Phys, Seoul 136713, South Korea
[3] NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA
来源：
PHYSICAL REVIEW B | 2010年 / 82卷 / 19期
基金：
美国国家科学基金会;
关键词：
HETEROSTRUCTURES; MULTILAYERS;
D O I：
10.1103/PhysRevB.82.195205
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Interlayer exchange coupling (IEC) between two Ga0.95Mn0.05As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.
引用
收藏
页数：5
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