On-Nanowire Spatial Band Gap Design for White Light Emission

被引：85

作者：

Yang, Zongyin ^{[2
]}

Xu, Jinyou ^{[1
]}

Wang, Pan ^{[2
]}

Zhuang, Xiujuan ^{[1
]}

Pan, Anlian ^{[1
]}

Tong, Limin ^{[2
]}

机构：

[1] Hunan Univ, Coll Phys & Microelect Sci, Key Lab Micro Nano Phys & Technol Hunan Prov, Changsha 410082, Hunan, Peoples R China

[2] Zhejiang Univ, Dept Opt Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Peoples R China

来源：

NANO LETTERS | 2011年 / 11卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Semiconductor nanowire; band gap engineering; tunable photoluminescence; white light emission; GROWTH; HETEROSTRUCTURES; NANOBELTS; GALLIUM;

D O I：

10.1021/nl203529h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrated a substrate-moving vapor-liquid-solid (VLS) route for growing composition gradient ZnCdSSe alloy nanowires. Relying on temperature-selected composition deposition along their lengths, single tricolor ZnCdSSe alloy nanowires with engineerable band gap covering the entire visible range were obtained. The photometric property of these tricolor nanowires, which was determined by blue-, green-, and red-color emission intensities, can be in turn controlled by their corresponding emission lengths. More particularly, under carefully selected growth conditions, on-nanowire white light emission has been achieved. Band-gap-engineered semiconductor alloy nanowires demonstrated here may find applications in broad band light absorption and emission devices.

引用

页码：5085 / 5089

页数：5

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