Detection of terahertz radiation using submicron field effect transistors and their use for inspection applications

被引：0

作者：

Delgado Notario, J. A. ^{[1
]}

Javadi, E. ^{[2
]}

Velazquez, J. E. ^{[1
]}

Diez, E. ^{[1
]}

Meziani, Y. M. ^{[1
]}

Fobelets, K. ^{[3
]}

机构：

[1] Salamanca Univ, NanoLab, E-37008 Salamanca, Spain

[2] Univ Tehran, Coll Engn, Sch ECE, Tehran, Iran

[3] Imperial Coll, Dept Elect & Elect Engn, London, England

来源：

MILLIMETRE WAVE AND TERAHERTZ SENSORS AND TECHNOLOGY X | 2017年 / 10439卷

关键词：

GaAs PHEMT; Si-MODFET; Detectors; Plasma waves; Terahertz imaging; GRAPHENE;

D O I：

10.1117/12.2278208

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We investigated room temperature detection of terahertz radiation by using two different types of transistors (Strained Silicon Modulation field effect transistor, GaAs PHEMT). Experimental results show a good level of response under excitation at 0.3 THz. Competitive performance parameters were obtained (NEP and responsivity) in comparison with other detectors. Enhancement of the photoresponse signal by imposing a dc drain-to-source current (I-ds) was observed experimentally. Inspection of hidden objects by using those devices within a terahertz imaging setup was demonstrated at 300 GHz and a better image was obtained under I-ds.

引用

页数：6

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