Detection of terahertz radiation using submicron field effect transistors and their use for inspection applications

被引：0
|
作者：
Delgado Notario, J. A. [1 ]
Javadi, E. [2 ]
Velazquez, J. E. [1 ]
Diez, E. [1 ]
Meziani, Y. M. [1 ]
Fobelets, K. [3 ]
机构：
[1] Salamanca Univ, NanoLab, E-37008 Salamanca, Spain
[2] Univ Tehran, Coll Engn, Sch ECE, Tehran, Iran
[3] Imperial Coll, Dept Elect & Elect Engn, London, England
来源：
MILLIMETRE WAVE AND TERAHERTZ SENSORS AND TECHNOLOGY X | 2017年 / 10439卷
关键词：
GaAs PHEMT; Si-MODFET; Detectors; Plasma waves; Terahertz imaging; GRAPHENE;
D O I：
10.1117/12.2278208
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We investigated room temperature detection of terahertz radiation by using two different types of transistors (Strained Silicon Modulation field effect transistor, GaAs PHEMT). Experimental results show a good level of response under excitation at 0.3 THz. Competitive performance parameters were obtained (NEP and responsivity) in comparison with other detectors. Enhancement of the photoresponse signal by imposing a dc drain-to-source current (I-ds) was observed experimentally. Inspection of hidden objects by using those devices within a terahertz imaging setup was demonstrated at 300 GHz and a better image was obtained under I-ds.
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页数：6
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