Features of photoluminescence of uniformly and selectively erbium doped silicon structures produced by the sublimation MBE method

被引：0
|
作者：
Andreev, BA [1 ]
Bresler, MS
Gusev, OB
Krasil'nik, ZF
Kuznetsov, VP
Soldatkin, AO
Yassievich, IN
机构：
[1] Russian Acad Sci, Inst Microstruct Phys, Nizhnii Novgorod, Russia
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA | 2001年 / 65卷 / 02期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：271 / 275
页数：5
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