Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity

被引：1

作者：

Inokawa, Hiroshi ^{[1
]}

Du, Wei ^{[1
]}

Kawai, Mitsuru ^{[1
]}

Satoh, Hiroaki ^{[1
]}

Ono, Atsushi ^{[1
]}

Singh, Vipul ^{[1
]}

机构：

[1] Shizuoka Univ, Elect Res Inst, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

来源：

INTER ACADEMIA 2010: GLOBAL RESEARCH AND EDUCATION | 2011年 / 222卷

关键词：

Single-photon detection; Metal-oxide-semiconductor field-effect transistor (MOSFET); Silicon-on-insulator (SOI); Radio-frequency (RE) reflectance; Surface plasmon antenna; TRANSISTOR;

D O I：

10.4028/www.scientific.net/AMR.222.3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A unique single-photon detector is reported, which utilizes scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with single-electron sensitivity, and features low-voltage operation without carrier multiplication and low dark counts. Primary single-photon detection characteristics are presented, and then several issues related to operation speed and quantum efficiency are to be addressed.

引用

页码：3 / 7

页数：5

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