An Effective and Efficient Approach for Layer Assignment with Thermal Through-Silicon-Vias Planning

被引:0
|
作者
Yeh, Hua-Hsin [1 ]
Huang, Chen-Yu [1 ]
Huang, Shih-Hsu [1 ]
Nieh, Yow-Tyng [2 ]
机构
[1] Chung Yuan Christian Univ, Dept Elect Engn, Chungli, Taiwan
[2] Ind Technol Res Inst, Informat & Commun Res Labs, Hsinchu, Taiwan
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Three-dimensional integrated circuit (3D IC) process technology can improve the circuit speed and reduce the power dissipation. However, because of low thermal conductivities of dielectrics between active layers, the heat generated by the stacked layers results in a large temperature increase, which may degrade the circuit speed and reduce the circuit reliability. Previous work uses integer linear programming, which is an NP-hard approach, at the high-level design stage to deal with the simultaneous layer assignment and thermal TSVs planning for reducing the temperature increase. In this paper, we propose a heuristic algorithm to perform layer assignment with thermal TSVs planning in polynomial time complexity. Experimental results show that our approach is effective and efficient for reducing the temperature increase.
引用
收藏
页码:294 / 297
页数:4
相关论文
共 50 条
  • [41] An Effective Approach for Thermal Performance Analysis of 3-D Integrated Circuits With Through-Silicon Vias
    Chai, Jingrui
    Dong, Gang
    Yang, Yintang
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2019, 9 (05): : 877 - 887
  • [42] 3D integration of pixel readout chips using Through-Silicon-Vias
    Diaz, Francisco Piernas
    Alozy, Jerome
    Al-Tawil, Sara
    Buytaert, Jan
    Campbell, Michael
    Fritzsch, Thomas
    Kloukinas, Kostas
    Kovacs, Mark Istvan
    Cudie, Xavier Llopart
    Pinto, Mateus Vicente Barreto
    Wyllie, Ken
    JOURNAL OF INSTRUMENTATION, 2025, 20 (01):
  • [43] Testing 3-D IC Through-Silicon-Vias (TSVs) by Direct Probing
    Kandalaft, Nabeeh
    Rashidzadeh, Rashid
    Ahmadi, Majid
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2013, 32 (04) : 538 - 546
  • [44] Enabling Continuous Cu Seed Layer for Deep Through-Silicon-Vias With High Aspect Ratio by Sequential Sputtering and Electroless Plating
    Zhang, Ziyue
    Ding, Yingtao
    Xiao, Lei
    Cai, Ziru
    Yang, Baoyan
    Chen, Zhiming
    Xie, Huikai
    IEEE ELECTRON DEVICE LETTERS, 2021, 42 (10) : 1520 - 1523
  • [45] Insights into Laser Ablation Processes of Heterogeneous Samples: Toward Analysis of Through-Silicon-Vias
    Moreno-Garcia, Pavel
    Grimaudo, Valentine
    Riedo, Andreas
    Lopez, Alena Cedeno
    Wiesendanger, Reto
    Tulej, Marek
    Gruber, Cynthia
    Lortscher, Emanuel
    Wurz, Peter
    Broekmann, Peter
    ANALYTICAL CHEMISTRY, 2018, 90 (11) : 6666 - 6674
  • [46] High aspect ratio copper through-silicon-vias for 3D integration
    Song, Chongshen
    Wang, Zheyao
    Chen, Qianwen
    Cai, Jian
    Liu, Litian
    MICROELECTRONIC ENGINEERING, 2008, 85 (10) : 1952 - 1956
  • [47] High aspect ratio and low capacitance through-silicon-vias (TSVs) with polymer insulation layers
    Huang, Cui
    Chen, Qianwen
    Wu, Dong
    Wang, Zheyao
    MICROELECTRONIC ENGINEERING, 2013, 104 : 12 - 17
  • [48] Spatial-Temporal Modeling of Extreme Bottom-up Filling of Through-Silicon-Vias
    Wheeler, D.
    Moffat, T. P.
    Josell, D.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2013, 160 (12) : D3260 - D3265
  • [49] Efficient Thermal Simulation for 3-D IC With Thermal Through-Silicon Vias
    Oh, Dongkeun
    Chen, Charlie Chung Ping
    Hu, Yu Hen
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2012, 31 (11) : 1767 - 1771
  • [50] Wideband Capacitance Evaluation of Silicon-Insulator-Silicon Through-Silicon-Vias for 3D Integration Applications
    Wang, Xinghua
    Xiong, Miao
    Chen, Zhiming
    Li, Bohao
    Yan, Yangyang
    Ding, Yingtao
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (02) : 216 - 219