Reduced material loss in thin-film lithium niobate waveguides

被引:54
|
作者
Shams-Ansari, Amirhassan [1 ]
Huang, Guanhao [2 ]
He, Lingyan [3 ]
Li, Zihan [2 ]
Holzgrafe, Jeffrey [1 ]
Jankowski, Marc [4 ,5 ]
Churaev, Mikhail [2 ]
Kharel, Prashanta
Cheng, Rebecca [1 ]
Zhu, Di [1 ]
Sinclair, Neil [1 ]
Desiatov, Boris [1 ]
Zhang, Mian
Kippenberg, Tobias J. [2 ]
Loncar, Marko [1 ]
机构
[1] Harvard Univ, John A Paulson Sch Engn & Appl Sci, 29 Oxford St, Cambridge, MA 02138 USA
[2] Swiss Fed Inst Technol Lausanne EPFL, Inst Phys, CH-1015 Lausanne, Switzerland
[3] HyperLight, 501 Massachusetts Ave, Cambridge, MA 02139 USA
[4] Stanford Univ, EL Ginzton Lab, 348 Via Pueblo Mall, Stanford, CA 94305 USA
[5] NTT Res Inc, Phys & Informat Labs, 940 Stewart Dr, Sunnyvale, CA 94085 USA
基金
瑞士国家科学基金会;
关键词
GENERATION;
D O I
10.1063/5.0095146
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Thin-film lithium niobate has shown promise for scalable applications ranging from single-photon sources to high-bandwidth data communication systems. Realization of the next generation high-performance classical and quantum devices, however, requires much lower optical losses than the current state of the art resonator (Q-factor of similar to 10 x 10(6)million). Yet the material limitations of ion-sliced thin film lithium niobate have not been explored; therefore, it is unclear how high the quality factor can be achieved in this platform. Here, using our newly developed characterization method, we find out that the material limited quality factor of thin film lithium niobate photonic platform can be improved using post-fabrication annealing and can be as high as Q approximate to 1.6 x 10(8) at telecommunication wavelengths, corresponding to a propagation loss of 0.2 dB/m. (C) 2022 Author(s).
引用
收藏
页数:7
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