High Mobility in a Stable Transparent Perovskite Oxide

被引：350

作者：

Kim, Hyung Joon ^{[2
]}

Kim, Useong ^{[1
]}

Kim, Hoon Min ^{[1
]}

Kim, Tai Hoon ^{[2
]}

Mun, Hyo Sik ^{[1
]}

Jeon, Byung-Gu ^{[2
]}

Hong, Kwang Taek ^{[2
]}

Lee, Woong-Jhae ^{[2
]}

Ju, Chanjong ^{[1
]}

Kim, Kee Hoon ^{[2
]}

Char, Kookrin ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Ctr Strongly Correlated Mat Res, Seoul 151747, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 151747, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 06期

关键词：

THIN-FILMS; CONDUCTING OXIDES; DIFFUSION; BASNO3; OXYGEN; SEMICONDUCTORS; SCATTERING;

D O I：

10.1143/APEX.5.061102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm(2) V-1 s(-1) at a doping level of 8 x 10(19) cm(-3), constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm(2) V-1 s(-1) at a doping level of 4: 4 x 10(20) cm(-3). We also show that resistance of (Ba, La)SnO3 changes little even after a thermal cycle to 530 degrees C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[31] High mobility and transparent ZTO ETM prepared by RF reactive co-sputtering for perovskite solar cell application
Islam, M. A.
Rahman, K. S.
Misran, H.
Asim, N.
Hossain, M. S.
Akhtaruzzaman, M.
Amin, N.
RESULTS IN PHYSICS, 2019, 14
[32] Physical properties of transparent perovskite oxides (Ba, La)SnO3 with high electrical mobility at room temperature
Kim, Hyung Joon
Kim, Useong
Kim, Tai Hoon
Kim, Jiyeon
Kim, Hoon Min
Jeon, Byung-Gu
Lee, Woong-Jhae
Mun, Hyo Sik
Hong, Kwang Taek
Yu, Jaejun
Char, Kookrin
Kim, Kee Hoon
PHYSICAL REVIEW B, 2012, 86 (16):
[33] High-mobility transparent conductive thin films of cerium-doped hydrogenated indium oxide
Kobayashi, Eiji
Watabe, Yoshinni
Yamamoto, Tetsuya
APPLIED PHYSICS EXPRESS, 2015, 8 (01)
[34] High energy density, temperature stable lead-free ceramics by introducing high entropy perovskite oxide
Zhou, Shiyu
Pu, Yongping
Zhang, Xuqing
Shi, Yu
Gao, Ziyan
Feng, Yu
Shen, Guodong
Wang, Xueyun
Wang, Dawei
CHEMICAL ENGINEERING JOURNAL, 2022, 427
[35] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
Chiang, HQ
Wager, JF
Hoffman, RL
Jeong, J
Keszler, DA
APPLIED PHYSICS LETTERS, 2005, 86 (01) : 013503 - 1
[36] Hydrogen-doped In2O3 as high-mobility transparent conductive oxide
Koida, Takashi
Fujiwara, Hiroyuki
Kondo, Michio
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (25-28): : L685 - L687
[37] Characterizing high-mobility indium zinc oxide for the front transparent conductive oxide layer in silicon heterojunction solar cells
Quispe, David
Mohsin, Syeda
Leilaeioun, Ashling
Holman, Zachary C.
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), 2018, : 3136 - 3138
[38] Metal oxide charge transporting layers for stable high-performance perovskite solar cells
Das Mahapatra, Ayon
Lee, Jin-Wook
CRYSTENGCOMM, 2022, 24 (41) : 7229 - 7249
[39] Dehydrogenation of ethylbenzene over highly active and stable perovskite oxide catalyst - Effect of lattice oxygen on/in perovskite oxide and role of A/B site in perovskite oxide
Watanabe, Ryo
Sekine, Yasushi
Kojima, Jung
Matsukata, Masahiko
Kikuchi, Eiichi
APPLIED CATALYSIS A-GENERAL, 2011, 398 (1-2) : 66 - 72
[40] Enhanced optical responsivity of InAlAs/InGaAs metamorphic high mobility electron mobility using indium tin oxide transparent gate technology
Chiu, Hsien-Chin
Lin, Che-Kai
Lin, Chao-Wei
Chen, Ming-Yang
APPLIED PHYSICS LETTERS, 2008, 93 (04)

← 1 2 3 4 5 →