High Mobility in a Stable Transparent Perovskite Oxide

被引：350

作者：

Kim, Hyung Joon ^{[2
]}

Kim, Useong ^{[1
]}

Kim, Hoon Min ^{[1
]}

Kim, Tai Hoon ^{[2
]}

Mun, Hyo Sik ^{[1
]}

Jeon, Byung-Gu ^{[2
]}

Hong, Kwang Taek ^{[2
]}

Lee, Woong-Jhae ^{[2
]}

Ju, Chanjong ^{[1
]}

Kim, Kee Hoon ^{[2
]}

Char, Kookrin ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Ctr Strongly Correlated Mat Res, Seoul 151747, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 151747, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 06期

关键词：

THIN-FILMS; CONDUCTING OXIDES; DIFFUSION; BASNO3; OXYGEN; SEMICONDUCTORS; SCATTERING;

D O I：

10.1143/APEX.5.061102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm(2) V-1 s(-1) at a doping level of 8 x 10(19) cm(-3), constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm(2) V-1 s(-1) at a doping level of 4: 4 x 10(20) cm(-3). We also show that resistance of (Ba, La)SnO3 changes little even after a thermal cycle to 530 degrees C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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