Photoelectrochemical properties of FTO/p-NiO electrode induced by UV light irradiation

被引:4
|
作者
da Silva, Marcelo Rodrigues [1 ]
Leao Neto, Vanildo Souza [2 ]
Lucilha, Adriana Campano [2 ]
de Andrade Scalvi, Luis Vicente [3 ]
Dall'Antonia, Luiz Henrique [2 ]
机构
[1] Sao Paulo State Univ, UNESP, CTI, Engn Coll, Sao Paulo, Brazil
[2] Univ Estadual Londrina, Dept Chem, UEL, Londrina, Parana, Brazil
[3] Sao Paulo State Univ, UNESP, FC, Dept Phys, Sao Paulo, Brazil
基金
巴西圣保罗研究基金会;
关键词
Photoelectrochemical properties; FTO/p-NiO; Electrode; Methylene blue; NICKEL-OXIDE; THIN-FILMS; ELECTROCHROMIC PROPERTIES; NANOSTRUCTURED NIO; PHOTOCATALYTIC DEGRADATION; ELECTRICAL-PROPERTIES; TEMPERATURE; OXIDATION; NANOPARTICLES; FABRICATION;
D O I
10.1007/s11581-014-1300-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Photoelectrochemical properties of p-nickel oxide (NiO) thin film deposited on fluorine-doped tin oxide (FTO) electrode, by combination of co-precipitation in aqueous media along with the dip-coating process, were investigated by cyclic voltammetry and chronoamperometry techniques in sodium sulfate (Na2SO4) electrolyte solution. The electrochemical characterization measurements have shown that the FTO/p-NiO electrode presents sensitivity to UV light, as observed by the increased photo-induced current, exposed to a more negative potential. The photoelectrochemical parameters obtained were photocurrent response time (a dagger t (1)), photocurrent decay time (a dagger t (0)), and photocurrent density stability (j (ph), j (light on) -aEuro parts per thousand j (light off)). Besides, this electrode shows excellent performance for methylene blue degradation under UV light irradiation condition, with estimated k (obs) value of 170 x 10(-4) min(-1), which is nine times higher than the dark condition and about three times higher than NiO powder catalyst. Results presented here allow concluding that the p-NiO thin film stands as an important electrode material with technological potential to be used directly in environmental preservation.
引用
收藏
页码:1407 / 1415
页数:9
相关论文
共 50 条
  • [31] Electrical properties of p-NiO/n-ZnO two-phase mixtures
    Seoul Natl Univ, Seoul, Korea, Republic of
    Solid State Ionics, 3-4 (333-348):
  • [32] PHOTOELECTROCHEMICAL PROPERTIES OF A GAP ELECTRODE WITH AN N/P JUNCTION
    CARLSSON, P
    UOSAKI, K
    HOLMSTROM, B
    KITA, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (02) : 524 - 528
  • [33] ZnO hole blocking layer induced highly UV responsive p-NiO/n-ZnO/n-Si heterojunction photodiodes
    Hwang, Jun-Dar
    Lin, Meng-Chi
    SENSORS AND ACTUATORS A-PHYSICAL, 2023, 349
  • [34] Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode
    Deng, R.
    Yao, B.
    Li, Y. F.
    Xu, Y.
    Li, J. C.
    Li, B. H.
    Zhang, Z. Z.
    Zhang, L. G.
    Zhao, H. F.
    Shen, D. Z.
    JOURNAL OF LUMINESCENCE, 2013, 134 : 240 - 243
  • [35] Plasmonic Au-decorated hierarchical p-NiO/n-ZnO heterostructure arrays for enhanced photoelectrochemical water splitting
    Cai, Junhao
    Li, Ruoping
    Cao, Jianrui
    Liu, Junhui
    Han, Junhe
    Huang, Mingju
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2022, 135
  • [36] Optimization and characterization of NiO thin film and the influence of thickness on the electrical properties of n-ZnO nanorods/p-NiO heterojunction
    Echresh, Ahmad
    Abbasi, Mazhar Ali
    Shoushtari, Morteza Zargar
    Farbod, Mansoor
    Nur, Omer
    Willander, Magnus
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (11)
  • [37] Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction
    Zhao, Yang
    Wang, Hui
    Wu, Chao
    Li, Wancheng
    Gao, Fubin
    Wu, Guoguang
    Zhang, Baolin
    Du, Guotong
    OPTICS COMMUNICATIONS, 2015, 336 : 1 - 4
  • [38] Plasmonic Au-decorated hierarchical p-NiO/n-ZnO heterostructure arrays for enhanced photoelectrochemical water splitting
    Cai, Junhao
    Li, Ruoping
    Cao, Jianrui
    Liu, Junhui
    Han, Junhe
    Huang, Mingju
    Physica E: Low-Dimensional Systems and Nanostructures, 2022, 135
  • [39] Pure ultraviolet light-emitting diode based on the p-NiO/i-NiO/n-GaN structure by magnetron sputtering
    Song, Chengle
    Xiang, Guojiao
    Zhang, Jinming
    Yue, Zhiang
    Zhang, Xian
    Ding, Bingxin
    Jin, Yidan
    Wang, Peiyao
    Li, Haoming
    He, Hangyu
    Wang, Lukai
    Zhao, Yang
    Wang, Hui
    OPTICAL MATERIALS, 2023, 145
  • [40] Preparation of nanostructured p-NiO/n-Fe2O3 heterojunction and study of their enhanced photoelectrochemical water splitting performance
    Rajendran, Ramesh
    Yaakob, Zahira
    Teridi, Mohd Asri Mat
    Rahaman, Muhammad Syukri Abd
    Sopian, Kamaruzzaman
    MATERIALS LETTERS, 2014, 133 : 123 - 126