Photoelectrochemical properties of FTO/p-NiO electrode induced by UV light irradiation

被引:4
|
作者
da Silva, Marcelo Rodrigues [1 ]
Leao Neto, Vanildo Souza [2 ]
Lucilha, Adriana Campano [2 ]
de Andrade Scalvi, Luis Vicente [3 ]
Dall'Antonia, Luiz Henrique [2 ]
机构
[1] Sao Paulo State Univ, UNESP, CTI, Engn Coll, Sao Paulo, Brazil
[2] Univ Estadual Londrina, Dept Chem, UEL, Londrina, Parana, Brazil
[3] Sao Paulo State Univ, UNESP, FC, Dept Phys, Sao Paulo, Brazil
基金
巴西圣保罗研究基金会;
关键词
Photoelectrochemical properties; FTO/p-NiO; Electrode; Methylene blue; NICKEL-OXIDE; THIN-FILMS; ELECTROCHROMIC PROPERTIES; NANOSTRUCTURED NIO; PHOTOCATALYTIC DEGRADATION; ELECTRICAL-PROPERTIES; TEMPERATURE; OXIDATION; NANOPARTICLES; FABRICATION;
D O I
10.1007/s11581-014-1300-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Photoelectrochemical properties of p-nickel oxide (NiO) thin film deposited on fluorine-doped tin oxide (FTO) electrode, by combination of co-precipitation in aqueous media along with the dip-coating process, were investigated by cyclic voltammetry and chronoamperometry techniques in sodium sulfate (Na2SO4) electrolyte solution. The electrochemical characterization measurements have shown that the FTO/p-NiO electrode presents sensitivity to UV light, as observed by the increased photo-induced current, exposed to a more negative potential. The photoelectrochemical parameters obtained were photocurrent response time (a dagger t (1)), photocurrent decay time (a dagger t (0)), and photocurrent density stability (j (ph), j (light on) -aEuro parts per thousand j (light off)). Besides, this electrode shows excellent performance for methylene blue degradation under UV light irradiation condition, with estimated k (obs) value of 170 x 10(-4) min(-1), which is nine times higher than the dark condition and about three times higher than NiO powder catalyst. Results presented here allow concluding that the p-NiO thin film stands as an important electrode material with technological potential to be used directly in environmental preservation.
引用
收藏
页码:1407 / 1415
页数:9
相关论文
共 50 条
  • [21] Nanostructure, optical and electrical properties of p-NiO/n-Si heterojunction diodes
    Senol Kaya
    Applied Physics A, 2020, 126
  • [22] Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction
    Jung, Byung Oh
    Kwon, Yong Hun
    Seo, Dong Ju
    Lee, Dong Seon
    Cho, Hyung Koun
    JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 314 - 318
  • [23] Fabrication of nanostructured flowerlike p-BiOI/p-NiO heterostructure and its efficient photocatalytic performance in water treatment under visible-light irradiation
    Yosefi, Leila
    Haghighi, Mohammad
    APPLIED CATALYSIS B-ENVIRONMENTAL, 2018, 220 : 367 - 378
  • [24] Photo-electrochemical hydrogen evolution over FTO/Ni0.98Si0.02O2-Ni electrode induced by visible and UV light irradiation
    Yadav, Rajkumar
    Singh, Hari
    Saini, Sandhya
    Biswas, Bijoy
    Kumar, Avnish
    Sinha, Anil Kumar
    JOURNAL OF APPLIED ELECTROCHEMISTRY, 2019, 49 (10) : 991 - 1002
  • [25] Photo-electrochemical hydrogen evolution over FTO/Ni0.98Si0.02O2-Ni electrode induced by visible and UV light irradiation
    Rajkumar Yadav
    Hari Singh
    Sandhya Saini
    Bijoy Biswas
    Avnish Kumar
    Anil Kumar Sinha
    Journal of Applied Electrochemistry, 2019, 49 : 991 - 1002
  • [26] Electrical properties of p-NiO/n-ZnO two-phase mixtures
    Sinn, DS
    SOLID STATE IONICS, 1996, 83 (3-4) : 333 - 348
  • [27] Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon
    H. P. Parkhomenko
    M. N. Solovan
    P. D. Maryanchuk
    Semiconductors, 2018, 52 : 859 - 863
  • [28] Nanostructure, optical and electrical properties of p-NiO/n-Si heterojunction diodes
    Kaya, Senol
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 126 (08):
  • [29] Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon
    Parkhomenko, H. P.
    Solovan, M. N.
    Maryanchuk, P. D.
    SEMICONDUCTORS, 2018, 52 (07) : 859 - 863
  • [30] Ultraviolet electroluminescence properties of the p-NiO/n-GaN-based heterojunction diodes
    Wang, Haoning
    Fang, Guojia
    Long, Hao
    Li, Songzhan
    Mo, Xiaoming
    Huang, Huihui
    Zhou, Hai
    Zhao, Xingzhong
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (12)