Spatially resolved luminescence spectroscopy of single GaN/(Al,Ga)N quantum disks

被引：0
|
作者：
Jahn, U. [1 ]
Calleja, E.
Ristic, J.
Trampert, A. [1 ]
Rivera, C. [2 ,3 ]
机构：
[1] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany
[2] Univ Politecn Madrid, ISOM, Madrid 28040, Spain
[3] Univ Politecn Madrid, ETSI Telecommun, Dept Ingn Elect, Madrid 28040, Spain
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期
关键词：
D O I：
10.1002/pssc.200778508
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The dependence of the optical transition energy E-t of GaN quantum disks (Qdisks) embedded within (Al, Ga)N nanocolumns grown on a (111) Si substrate on disk thickness, disk diameter, barrier thickness, and barrier composition has been investigated by both spatially resolved cathodoluminescence spectroscopy and applying a theoretical model. Results of E-t on the disk and barrier thickness, as well as barrier composition resemble those of corresponding quantum wells, whereas results on the disk diameter are essentially determined by the lateral strain distribution of the Qdisks.
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页码：2164 / +
页数：2
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