Spatially resolved luminescence spectroscopy of single GaN/(Al,Ga)N quantum disks

被引：0

作者：

Jahn, U. ^{[1
]}

Calleja, E.

Ristic, J.

Trampert, A. ^{[1
]}

Rivera, C. ^{[2
,3
]}

机构：

[1] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

[2] Univ Politecn Madrid, ISOM, Madrid 28040, Spain

[3] Univ Politecn Madrid, ETSI Telecommun, Dept Ingn Elect, Madrid 28040, Spain

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

D O I：

10.1002/pssc.200778508

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dependence of the optical transition energy E-t of GaN quantum disks (Qdisks) embedded within (Al, Ga)N nanocolumns grown on a (111) Si substrate on disk thickness, disk diameter, barrier thickness, and barrier composition has been investigated by both spatially resolved cathodoluminescence spectroscopy and applying a theoretical model. Results of E-t on the disk and barrier thickness, as well as barrier composition resemble those of corresponding quantum wells, whereas results on the disk diameter are essentially determined by the lateral strain distribution of the Qdisks.

引用

页码：2164 / +

页数：2

共 50 条

[31] Spatially resolved luminescence properties of etched quantum well microstructures
Landesman, J. P.
Diak, E.
LaPierre, R. R.
Levallois, C.
Ghanad-Tavakoli, S.
JOURNAL OF APPLIED PHYSICS, 2024, 136 (12)
[32] Spatially resolved luminescence properties of etched quantum well microstructures
Landesman, J.P.
Diak, E.
LaPierre, R.R.
Levallois, C.
Ghanad-Tavakoli, S.
Journal of Applied Physics, 1600, 136 (12):
[33] Evidence of excitonic transitions by angle-resolved reflectivity for the determination of oscillator strengths in GaN/(Al, Ga)N quantum wells
Rakotonanahary, G.
Guebrou, S. Aberra
Lagarde, D.
Natali, F.
Reveret, F.
Disseix, P.
Leymarie, J.
Leroux, M.
Massies, J.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1, 2010, 7 (01): : 48 - 51
[34] Spatially and temporally resolved near-field spectroscopy of single GaAs quantum wires
Emiliani, V
Günther, T
Intonti, F
Richter, A
Lienau, C
Elsaesser, T
JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (31) : 5889 - 5900
[35] Spatially-resolved luminescence spectroscopy of CdSe quantum dots synthesized in ionic liquid crystal matrices
Magaryan, K. A.
Mikhailov, M. A.
Karimullin, K. R.
Knyazev, M. V.
Eremchev, I. Y.
Naumov, A. V.
Vasilieva, I. A.
Klimusheva, G. V.
JOURNAL OF LUMINESCENCE, 2016, 169 : 799 - 803
[36] Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices
Kirste, L.
Mueller, S.
Kiefer, R.
Quay, R.
Koehler, K.
Herres, N.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) : 8 - 14
[37] Effects of the spontaneous polarization and piezoelectric fields on the luminescence spectra of GaN/Al0.15Ga0.85N quantum wells
Traetta, G
Passaseo, A
Longo, M
Cannoletta, D
Cingolani, R
Lomascolo, M
Bonfiglio, A
Di Carlo, A
Della Sala, F
Lugli, P
Botchkarev, A
Morkoc, H
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 7 (3-4): : 929 - 933
[38] Effect of inserted ultrathin barrier layer on luminescence of GaN/Al0.5Ga0.5N multiple quantum wells
Park, Young S.
Kang, Tae W.
Kim, Yongmin
Im, Hyunsik
APPLIED PHYSICS LETTERS, 2009, 95 (10)
[39] Carrier diffusion lengths in (In,Ga)(As,N)/GaAs quantum wells studied by spatially resolved cathodoluminescence
Jahn, U
Miguel-Sanchez, J
Flissikowski, T
Grahn, HT
Hey, R
Guzmán, A
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3, 2006, 3 (03): : 627 - +
[40] Spatially resolved optical spectroscopy on natural quantum dots
Zrenner, A
Schaller, A
Markmann, M
Hagn, M
Arzberger, M
Henry, D
Abstreiter, G
Bohm, G
Weimann, G
APPLIED SURFACE SCIENCE, 1998, 123 : 356 - 365

← 1 2 3 4 5 →