Laser-Induced Damage Threshold of Barium Chalcogenides Crystals at 2091 nm

被引：0

作者：

Kostyukova, N. Yu. ^{[1
,2
,3
,4
]}

Boyko, A. A. ^{[1
,2
,3
]}

Eranov, I. D. ^{[5
]}

Kolker, D. B. ^{[1
,2
,4
]}

Antipov, O. L. ^{[5
]}

Erushin, E. Yu. ^{[2
,4
]}

Kostyukov, A. I. ^{[1
,2
]}

Badikov, D. V. ^{[6
]}

Badikov, V. V. ^{[6
]}

机构：

[1] Novosibirsk State Univ, Pirogova 2, Novosibirsk 630090, Russia

[2] Inst Laser Phys SB RAS, Prosp. Akad Lavrentyeva 15b, Novosibirsk 630090, Russia

[3] Special Technol Ltd, Zeljonaja Gorka 1-3, Novosibirsk 630058, Russia

[4] Novosibirsk State Tech Univ, 20 K Marx Av, Novosibirsk 630072, Russia

[5] Russian Acad Sci, Inst Appl Phys, 46 Ulyanov St, Nizhnii Novgorod 603950, Russia

[6] Kuban State Univ, High Technol Lab, 149 Stavropolskaya Str, Krasnodar 350040, Russia

来源：

INTERNATIONAL CONFERENCE LASER OPTICS 2020 (ICLO 2020) | 2020年

关键词：

laser-induced damage threshold (LIDT); barium chalcogenides; NONLINEAR CRYSTALS; BAGA4SE7;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper is devoted to a determination of the 0% probability laser-induced damage threshold of the BaGa4Se7 and BaGa2GeSe6 nonlinear elements by the R-on-1 procedure. A Ho:YAG laser radiation at 2091 nm with pulse duration 13-17 ns and varied pulse repetition rate, 2 kHz, 5 kHz and 10 kHz, was used for testing.

引用

页数：1

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