Laser-Induced Damage Threshold of Barium Chalcogenides Crystals at 2091 nm

被引:0
|
作者
Kostyukova, N. Yu. [1 ,2 ,3 ,4 ]
Boyko, A. A. [1 ,2 ,3 ]
Eranov, I. D. [5 ]
Kolker, D. B. [1 ,2 ,4 ]
Antipov, O. L. [5 ]
Erushin, E. Yu. [2 ,4 ]
Kostyukov, A. I. [1 ,2 ]
Badikov, D. V. [6 ]
Badikov, V. V. [6 ]
机构
[1] Novosibirsk State Univ, Pirogova 2, Novosibirsk 630090, Russia
[2] Inst Laser Phys SB RAS, Prosp. Akad Lavrentyeva 15b, Novosibirsk 630090, Russia
[3] Special Technol Ltd, Zeljonaja Gorka 1-3, Novosibirsk 630058, Russia
[4] Novosibirsk State Tech Univ, 20 K Marx Av, Novosibirsk 630072, Russia
[5] Russian Acad Sci, Inst Appl Phys, 46 Ulyanov St, Nizhnii Novgorod 603950, Russia
[6] Kuban State Univ, High Technol Lab, 149 Stavropolskaya Str, Krasnodar 350040, Russia
关键词
laser-induced damage threshold (LIDT); barium chalcogenides; NONLINEAR CRYSTALS; BAGA4SE7;
D O I
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper is devoted to a determination of the 0% probability laser-induced damage threshold of the BaGa4Se7 and BaGa2GeSe6 nonlinear elements by the R-on-1 procedure. A Ho:YAG laser radiation at 2091 nm with pulse duration 13-17 ns and varied pulse repetition rate, 2 kHz, 5 kHz and 10 kHz, was used for testing.
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