Effect of magnesium in KOH solution on anisotropic wet etching of silicon

被引：0

作者：

Tanaka, H ^{[1
]}

Cheng, D ^{[1
]}

Inoue, K ^{[1
]}

Shikida, M ^{[1
]}

Sato, K ^{[1
]}

机构：

[1] Nagoya Univ, Dept MicroNano Syst Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

PROCEEDINGS OF THE 2004 INTERNATIONAL SYMPOSIUM ON MICRO-NANOMECHATRONICS AND HUMAN SCIENCE | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Etching characteristics of Si in KOH solution containing Mg are investigated. Etch rate of silicon slightly decreases by the Mg on the order of 10 ppm in 32 wt.% KOH,while the etched surface roughness does not change in contrast to Cu as an impurity. The surface roughening caused by the ppb-level of Cu in KOH solution can be fully recovered by adding Mg on the order of 10 ppm in the solution.

引用

页码：121 / 125

页数：5

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