Effect of magnesium in KOH solution on anisotropic wet etching of silicon

被引：0

作者：

Tanaka, H ^{[1
]}

Cheng, D ^{[1
]}

Inoue, K ^{[1
]}

Shikida, M ^{[1
]}

Sato, K ^{[1
]}

机构：

[1] Nagoya Univ, Dept MicroNano Syst Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

PROCEEDINGS OF THE 2004 INTERNATIONAL SYMPOSIUM ON MICRO-NANOMECHATRONICS AND HUMAN SCIENCE | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Etching characteristics of Si in KOH solution containing Mg are investigated. Etch rate of silicon slightly decreases by the Mg on the order of 10 ppm in 32 wt.% KOH,while the etched surface roughness does not change in contrast to Cu as an impurity. The surface roughening caused by the ppb-level of Cu in KOH solution can be fully recovered by adding Mg on the order of 10 ppm in the solution.

引用

页码：121 / 125

页数：5

共 50 条

[41] The influence of oxidizing agents on etching and passivation of silicon in KOH solution
Xia, XH
Kelly, JJ
ELECTROCHIMICA ACTA, 2000, 45 (28) : 4645 - 4653
[42] A study of two-step silicon anisotropic etching for a polygon-shaped microstructure using KOH solution
Kang, IB
Haskard, MR
Samaan, ND
SENSORS AND ACTUATORS A-PHYSICAL, 1997, 62 (1-3) : 646 - 651
[43] New trends in atomic scale simulation of wet chemical etching of silicon with KOH
Camon, H
Moktadir, Z
DjafariRouhani, M
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 37 (1-3): : 142 - 145
[44] Micro-morphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH: velocity source forests
van Veenendaal, E
Sato, K
Shikida, M
Nijdam, AJ
van Suchtelen, J
SENSORS AND ACTUATORS A-PHYSICAL, 2001, 93 (03) : 232 - 242
[45] Silicon anisotropic wet etching simulation using molecular dynamics
Kakinaga, T
Hatai, A
Tabata, O
Isono, Y
Transducers '05, Digest of Technical Papers, Vols 1 and 2, 2005, : 816 - 819
[46] Towards wet anisotropic silicon etching of perfect pyramidal pits
Sarajlic, Edin
Yamahata, Christophe
Fujita, Hiroyuki
MICROELECTRONIC ENGINEERING, 2007, 84 (5-8) : 1419 - 1422
[47] Study of Anisotropic Wet Chemical Etching for Silicon Microneedles Fabrication
Lyubarskaya, Anna, V
Chaplygin, Yury A.
Golishnikov, Alexander A.
Pankratov, Oleg, V
PROCEEDINGS OF THE 2021 IEEE CONFERENCE OF RUSSIAN YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING (ELCONRUS), 2021, : 2579 - 2582
[48] Multiscale modeling of anisotropic wet chemical etching of crystalline silicon
Gosálvez, MA
Foster, AS
Nieminen, RM
EUROPHYSICS LETTERS, 2002, 60 (03): : 467 - 473
[49] 3-D modeling of anisotropic wet etching of silicon
Duk, Mariusz
Kociubinski, Andrzej
Bieniek, Tomasz
Janus, Pawel
PRZEGLAD ELEKTROTECHNICZNY, 2010, 86 (07): : 281 - 283
[50] Silicon nanomachining by scanning probe lithography and anisotropic wet etching
Sheu, JT
Chou, HT
Cheng, WL
Wu, CH
Yeou, LS
MATERIALS & PROCESS INTEGRATION FOR MEMS, 2002, 9 : 159 - 174

← 1 2 3 4 5 →