Optimization of the growth temperature of α-Ga2O3 epilayers grown by halide vapor phase epitaxy

被引：52
|
作者：
Son, Hoki [1 ,2 ]
Jeon, Dae-Woo [1 ]
机构：
[1] Korea Inst Ceram Engn & Technol, 15-5 Chungmugong Dong, Jinju Si 52851, Gyeongsangnam D, South Korea
[2] Korea Univ, Dept Mat Sci & Engn, Seoul 02841, South Korea
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 773卷
关键词：
alpha-Ga2O3; HVPE; Phase transition; Growth temperature; FILM;
D O I：
10.1016/j.jallcom.2018.09.230
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report the optimized temperature for the growth of alpha-Ga2O3 on alpha-Al2O3 substrate using halide vapor phase epitaxy. The alpha-Ga2O3 epilayer grown at 470 degrees C exhibited the lowest full-width-at-half-maximum values for the (0006) and (10-14) peaks in the X-ray omega-scan rocking curve, which confirmed that the growth temperature strongly influenced the phase transition of Ga2O3 and affected the crystal quality of the alpha-Ga2O3 epitaxial layers. In addition, the impurity concentration in this alpha-Ga2O3 epilayer as determined by secondary ion mass spectroscopy was found to be in the range of 10(16)-10(18)cm(-3). (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：631 / 635
页数：5
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