Structural characteristics of α-Ga2O3 films grown on sapphire by halide vapor phase epitaxy

被引：4
|
作者：
Kim, Soo Hyeon [1 ,2 ]
Yang, Mino [3 ]
Lee, Hae-Yong [4 ]
Choi, Jong-Soon [1 ,2 ]
Lee, Hyun Uk [1 ]
Kim, Un Jeong [5 ]
Lee, Moonsang [1 ]
机构：
[1] Korea Basic Sci Inst, Div Mat Anal & Res, Daejeon 34133, South Korea
[2] Chungnam Natl Univ, Grad Sch Analyt Sci & Technol, Daejeon 34134, South Korea
[3] Korea Basic Sci Inst Seoul, Seoul Ctr, Seoul 02841, South Korea
[4] LumiGNtech Co Ltd, Room 206,Business Incubator Bldg,233-5 Gasan Dong, Seoul 153801, South Korea
[5] Samsung Adv Inst Technol, Imaging Device Lab, Suwon 443803, South Korea
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 123卷
基金：
新加坡国家研究基金会;
关键词：
alpha-Ga2O3; Etch pit; Halide vapor epitaxy; Wet etch;
D O I：
10.1016/j.mssp.2020.105534
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
While the importance of alpha-Ga2O3 crystals is increasingly gaining much interest, the structural behavior of halide vapor phase epitaxy (HVPE) alpha-Ga2O3 crystals in wet chemical etching has not been explored yet. In this study, we investigate the structural characterization of HVPE alpha-Ga2O3 materials via alkali KOH solution etching. Further, the activation energy of the etch rate for the materials, etch pit, and surface roughness after wet chemical treatment have been examined. The cross-sectional TEM analysis demonstrates that the triangular-shaped etch pits with (11 (2) over bar 6) plane are caused by the propagation of threading dislocations in the HVPE alpha-Ga2O3 crystals.
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页数：6
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