Optimization of the growth temperature of α-Ga2O3 epilayers grown by halide vapor phase epitaxy

被引：52

作者：

Son, Hoki ^{[1
,2
]}

Jeon, Dae-Woo ^{[1
]}

机构：

[1] Korea Inst Ceram Engn & Technol, 15-5 Chungmugong Dong, Jinju Si 52851, Gyeongsangnam D, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, Seoul 02841, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 773卷

关键词：

alpha-Ga2O3; HVPE; Phase transition; Growth temperature; FILM;

D O I：

10.1016/j.jallcom.2018.09.230

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the optimized temperature for the growth of alpha-Ga2O3 on alpha-Al2O3 substrate using halide vapor phase epitaxy. The alpha-Ga2O3 epilayer grown at 470 degrees C exhibited the lowest full-width-at-half-maximum values for the (0006) and (10-14) peaks in the X-ray omega-scan rocking curve, which confirmed that the growth temperature strongly influenced the phase transition of Ga2O3 and affected the crystal quality of the alpha-Ga2O3 epitaxial layers. In addition, the impurity concentration in this alpha-Ga2O3 epilayer as determined by secondary ion mass spectroscopy was found to be in the range of 10(16)-10(18)cm(-3). (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：631 / 635

页数：5

共 50 条

[21] Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
Oshima, Takayoshi
Oshima, Yuichi
APPLIED PHYSICS EXPRESS, 2022, 15 (07)
[22] Investigation of traps in halide vapor-phase epitaxy-grown β-Ga2O3 epilayers/n+-Ga2O3 using deep-level transient spectroscopy
Sheoran, Hardhyan
Kaushik, Janesh K.
Kumar, Vikram
Singh, Rajendra
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (12)
[23] Effect of VI/III ratio on properties of alpha-Ga2O3 epilayers grown by halide vapor phase epitaxy
Son, Hoki
Choi, Ye-Ji
Lee, Young-Jin
Lee, Mi-Jai
Kim, Jin-Ho
Kim, Sun Woog
Ra, Yong-Ho
Lim, Tae-Young
Hwang, Jonghee
Jeon, Dae-Woo
JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2018, 28 (03): : 135 - 139
[24] Pure-phase κ-Ga2O3 layers grown on c-plane sapphire by halide vapor phase epitaxy
Li, Yuewen
Xiu, Xiangqian
Xu, Wanli
Zhang, Liying
Zhao, Hong
Xie, Zili
Tao, Tao
Chen, Peng
Liu, Bin
Zhang, Rong
Zheng, Youdou
SUPERLATTICES AND MICROSTRUCTURES, 2021, 152
[25] Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy
Jeong, Yeong Je
Park, Ji-Hyeon
Yeom, Min Jae
Kang, Inho
Yang, Jeong Yong
Kim, Hyeong-Yun
Jeon, Dae-Woo
Yoo, Geonwook
APPLIED PHYSICS EXPRESS, 2022, 15 (07)
[26] Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers
Polyakov, Alexander
Nikolaev, Vladimir
Stepanov, Sergey
Almaev, Alexei
Pechnikov, Alexei
Yakimov, Eugene
Kushnarev, Bogdan O.
Shchemerov, Ivan
Scheglov, Mikhail
Chernykh, Alexey
Vasilev, Anton
Kochkova, Anastasia
Pearton, Stephen J.
JOURNAL OF APPLIED PHYSICS, 2022, 131 (21)
[27] Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire
Polyakov, A. Y.
Smirnov, N. B.
Shchemerov, I. V.
Yakimov, E. B.
Nikolaev, V. I.
Stepanov, S. I.
Pechnikov, A. I.
Chernykh, A. V.
Shcherbachev, K. D.
Shikoh, A. S.
Kochkova, A.
Vasilev, A. A.
Pearton, S. J.
APL MATERIALS, 2019, 7 (05)
[28] Depletion-mode vertical Ga2O3 trench MOSFETs fabricated using Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy
Sasaki, Kohei
Thieu, Quang Tu
Wakimoto, Daiki
Koishikawa, Yuki
Kuramata, Akito
Yamakoshi, Shigenobu
APPLIED PHYSICS EXPRESS, 2017, 10 (12)
[29] Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3
Xiu, Xiangqian
Zhang, Liying
Li, Yuewen
Xiong, Zening
Zhang, Rong
Zheng, Youdou
JOURNAL OF SEMICONDUCTORS, 2019, 40 (01)
[30] Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy
Lee, Gieop
Cha, An-Na
Cho, Sea
Chung, Jeong Soo
Moon, Young-Boo
Ha, Jun-Seok
CRYSTAL GROWTH & DESIGN, 2023, 24 (01) : 205 - 213

← 1 2 3 4 5 →