Annealing effects on electrical and optical properties of ZnO thin films synthesized by the electrochemical method

被引：14

作者：

Yoon, Sanghwa ^{[2
]}

Huh, Ilgoo ^{[2
]}

Lim, Jae-Hong ^{[1
]}

Yoo, Bongyoung ^{[2
]}

机构：

[1] Korea Inst Mat Sci, Mat Proc Div, Electrochem Res Grp, Changwon Si 641831, Gyeongnam, South Korea

[2] Hanyang Univ, Dept Mat Engn, Ansan 426791, Gyeonggi Do, South Korea

来源：

CURRENT APPLIED PHYSICS | 2012年 / 12卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

ZnO thin films; Annealing process; Electrochemical techniques; Electrical properties; ZINC-OXIDE FILMS; CATHODIC ELECTRODEPOSITION; HYDROGEN-PEROXIDE; SEMICONDUCTORS; DEPOSITION; OXYGEN; TEMPERATURE; MECHANISM; LAYERS;

D O I：

10.1016/j.cap.2011.11.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Microstructural and electrical properties of potentiostatically electrodeposited ZnO thin films from an aqueous bath were investigated after annealing at different temperatures in Ar and 5% H-2/Ar atmospheres. It is confirmed that the bandgap energy of ZnO thin films decreased with annealing from 3.42 to 3.27-3.29 eV by calculating the wavelength of the absorption region. The annealing at temperatures as low as 200 degrees C decreased the sheet resistance of ZnO thin films because of the extinction of Zn(OH)(2) in the atmosphere. In addition, the sheet resistance of ZnO thin films decreased by annealing in a 5% H-2 atmosphere, which caused an increase of carrier concentration by hydrogen reduction. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：784 / 788

页数：5

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