Impact of annealing on structural and optical properties of ZnO thin films

被引:7
|
作者
Sharmila, B. [1 ]
Singha, Monoj Kumar [2 ]
Dwivedi, Priyanka [1 ]
机构
[1] Indian Inst Informat Technol IIIT Sri City, Chittoor, India
[2] Indian Inst Sci IISc, Bengaluru, India
关键词
Photosensing; Microfabrication; Thin films; PDCR; Annealing; ZINC-OXIDE; GROWTH; NANOSTRUCTURES; TEMPERATURE; MECHANISM;
D O I
10.1016/j.mejo.2023.105759
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper analyzes the effect of annealing on morphological, structural and optical properties of Zinc Oxide (ZnO) thin films and their applications in optical sensing. ZnO thin films were deposited using radio frequency (RF) sputtering technique followed by annealing in presence of nitrogen environment at 100 degrees C, 200 degrees C and 300 degrees C. The effect of the annealing on surface and structural properties were studied through SEM, AFM, XRD, Raman and PL. Increment of the annealing temperature improves the texture coefficient of the film in (101) plane. Further optical sensing was performed on annealed ZnO thin films at room temperature. The results confirm that the annealing temperature of the thin films is related to crystalline structure and showed the highest optical response. The optimized annealed sample offers photo to dark current ratio (PDCR) in the order of 2.8 x 104. The annealed devices at 200 degrees C and 300 degrees C showed 102 times improved PDCR compared to devices annealed at 100 degrees C. This optimized sample showed improved results for UV range optical applications.
引用
收藏
页数:7
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