Quantum size effects of InAs- and InGaAs-quantum dots studied by scanning tunneling microscopy/spectroscopy

被引：5
|
作者：
Yamauchi, T [1 ]
Matsuba, Y
Ohyama, Y
Tabuchi, M
Nakamura, A
机构：
[1] Nagoya Univ, CIRSE, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan
[3] Japan Sci & Technol Corp, CREST, Shibuya Ku, Tokyo 1500002, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 3B期
关键词：
quantum dot; InGaAs; scanning tunneling microscopy; scanning tunneling spectroscopy; quantum size effect; alloying effect;
D O I：
10.1143/JJAP.40.2069
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Scanning tunneling spectroscopy has been used to study quantum size effects on the electronic structure of InAs and In0.46Ga0.54As quantum dots (QDs) in correlation with their morphologies. It is found that for both samples, the measured band gap increases with decreasing dot height. The observed height dependence of the gap energy has been well reproduced by the calculation based on a one-dimensional quantum well model. For the In0.46Ga0.54As QD, however, enrichment of Incomposition in the dot compared to the nominal composition has been observed.
引用
收藏
页码：2069 / 2072
页数：4
相关论文
共 50 条
  • [41] Scanning photoluminescence spectroscopy in InAs/InGaAs quantum-dot structures
    Dybiec, M
    Ostapenko, S
    Torchynska, TV
    Losada, EV
    APPLIED PHYSICS LETTERS, 2004, 84 (25) : 5165 - 5167
  • [42] Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy
    Kunets, Vas. P.
    Morgan, T. Al.
    Mazur, Yu. I.
    Dorogan, V. G.
    Lytvyn, P. M.
    Ware, M. E.
    Guzun, D.
    Shultz, J. L.
    Salamo, G. J.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (10)
  • [43] Quantum size effects on excitons in strained InAs/InP quantum dots
    Yoo, ChangKyoo
    Peter, A. John
    PHYSICA B-CONDENSED MATTER, 2010, 405 (22) : 4638 - 4642
  • [44] Tunneling and optical spectroscopy of InAs and InAs/ZnSe core/shell nanocrystalline quantum dots
    Millo, O.
    Katz, D.
    Cao, YunWei
    Banin, U.
    Physica Status Solidi (B) Basic Research, 2001, 224 (01): : 271 - 276
  • [45] Investigating the Capping of InAs Quantum Dots by InGaAs
    Liew, S. L.
    Walther, T.
    Irsen, S.
    Hopkinson, M.
    Skolnick, M. S.
    Collis, A. G.
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, 2008, 120 : 259 - +
  • [46] Shapes of InAs quantum dots on InGaAs/InP
    Hwang, H
    Yoon, S
    Kwon, H
    Yoon, E
    Kim, HS
    Lee, JY
    Cho, B
    APPLIED PHYSICS LETTERS, 2004, 85 (26) : 6383 - 6385
  • [47] Tunneling and optical spectroscopy of InAs and InAs/ZnSe Core/Shell nanocrystalline quantum dots
    Millo, O
    Katz, D
    Cao, YW
    Banin, U
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 224 (01): : 271 - 276
  • [48] Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters
    Lin, SD
    Lee, CP
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) : 2952 - 2956
  • [49] Quantitative scanning capacitance microscopy on single subsurface InAs quantum dots
    Smoliner, J.
    Brezna, W.
    Klang, P.
    Andrews, A. M.
    Strasser, G.
    APPLIED PHYSICS LETTERS, 2008, 92 (09)
  • [50] Direct Imaging of InGaAs quantum dot states by scanning tunneling spectroscopy
    Johal, TK
    Rinaldi, R
    Passaseo, A
    Cingolani, R
    Vasanelli, A
    Ferreira, R
    Bastard, G
    NANOSCALE SPECTROSCOPY AND ITS APPLICATIONS TO SEMICONDUCTOR RESEARCH, 2002, 588 : 241 - 251
12345