Quantum size effects of InAs- and InGaAs-quantum dots studied by scanning tunneling microscopy/spectroscopy

被引：5

作者：

Yamauchi, T ^{[1
]}

Matsuba, Y

Ohyama, Y

Tabuchi, M

Nakamura, A

机构：

[1] Nagoya Univ, CIRSE, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[3] Japan Sci & Technol Corp, CREST, Shibuya Ku, Tokyo 1500002, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 3B期

关键词：

quantum dot; InGaAs; scanning tunneling microscopy; scanning tunneling spectroscopy; quantum size effect; alloying effect;

D O I：

10.1143/JJAP.40.2069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling spectroscopy has been used to study quantum size effects on the electronic structure of InAs and In0.46Ga0.54As quantum dots (QDs) in correlation with their morphologies. It is found that for both samples, the measured band gap increases with decreasing dot height. The observed height dependence of the gap energy has been well reproduced by the calculation based on a one-dimensional quantum well model. For the In0.46Ga0.54As QD, however, enrichment of Incomposition in the dot compared to the nominal composition has been observed.

引用

页码：2069 / 2072

页数：4

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