CF4 plasma treatment for fabricating high-performance and reliable solid-phase-crystallized poly-Si TFTs

被引：33

作者：

Wang, SD ^{[1
]}

Lo, WH ^{[1
]}

Lei, TF ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 09期

关键词：

D O I：

10.1149/1.1955166

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A CF4 plasma treatment on solid-phase-crystallized (SPC) poly-Si thin-film transistors ( TFTs ) has been demonstrated. Using this technique, fluorine atoms can be introduced into the poly-Si film to passivate the defects, and hence, the device performance of the SPC poly-Si TFTs can be significantly improved. The fluorinated SPC poly- Si TFTs exhibit a good subthreshold slope, low threshold voltage, and high field effect mobility. Moreover, the fluorinated SPC poly- Si TFTs also exhibit an improved hot-carrier-stress immunity, which is due to the strong Si-F bonds formed in the poly-Si channel region. (c) 2005 The Electrochemical Society.

引用

页码：G703 / G706

页数：4

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