Subthreshold characteristic of double-gate accumulation-mode SOIPMOSFET

被引：0
|
作者：
Zhengfan, Zhang [1 ,2 ]
Zhaoji, Li [1 ]
Kaizhou, Tan [2 ]
Jiabin, Zhang [2 ]
机构：
[1] Univ Elect Sci & Technol China, Chengdu 610054, Peoples R China
[2] NLAIC, Chongqing 400060, Peoples R China
来源：
IEEE 2007 INTERNATIONAL SYMPOSIUM ON MICROWAVE, ANTENNA, PROPAGATION AND EMC TECHNOLOGIES FOR WIRELESS COMMUNICATIONS, VOLS I AND II | 2007年
关键词：
double-gate accumulation-mode; SOI MOSFET; subthreshold swing; analytical model;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, an analytical model of subthreshold swing for the double-gate accumulation-mode P-channel SOI MOSFET is described. The model is based oil Possion's equation and depletion approximation, and the relation of the subthreshold swing with both the gate oxide capacitance and the interface trap density is obtained. The model is verified by experiment and by numerical simulation. Also an approach to extracting the interface trap density with subthreshold swing is proposed.
引用
收藏
页码：1446 / +
页数：2
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