Subthreshold characteristic of double-gate accumulation-mode SOIPMOSFET

被引：0
|
作者：
Zhengfan, Zhang [1 ,2 ]
Zhaoji, Li [1 ]
Kaizhou, Tan [2 ]
Jiabin, Zhang [2 ]
机构：
[1] Univ Elect Sci & Technol China, Chengdu 610054, Peoples R China
[2] NLAIC, Chongqing 400060, Peoples R China
来源：
IEEE 2007 INTERNATIONAL SYMPOSIUM ON MICROWAVE, ANTENNA, PROPAGATION AND EMC TECHNOLOGIES FOR WIRELESS COMMUNICATIONS, VOLS I AND II | 2007年
关键词：
double-gate accumulation-mode; SOI MOSFET; subthreshold swing; analytical model;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, an analytical model of subthreshold swing for the double-gate accumulation-mode P-channel SOI MOSFET is described. The model is based oil Possion's equation and depletion approximation, and the relation of the subthreshold swing with both the gate oxide capacitance and the interface trap density is obtained. The model is verified by experiment and by numerical simulation. Also an approach to extracting the interface trap density with subthreshold swing is proposed.
引用
收藏
页码：1446 / +
页数：2
相关论文
共 50 条
  • [31] A Compact Model of Quantum Electron Density at the Subthreshold Region for Double-Gate Junctionless Transistors
    Duarte, Juan Pablo
    Kim, Moon-Seok
    Choi, Sung-Jin
    Choi, Yang-Kyu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (04) : 1008 - 1012
  • [32] NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs
    Lee, Chi-Woo
    Ferain, Isabelle
    Afzalian, Aryan
    Yan, Ran
    Dehdashti, Nima
    Razavi, Pedram
    Colinge, Jean-Pierre
    Park, Jong Tae
    MICROELECTRONICS RELIABILITY, 2009, 49 (9-11) : 1044 - 1047
  • [33] ANOMALOUS SUBTHRESHOLD SLOPES IN THIN-FILM ACCUMULATION-MODE SOI P-CHANNEL MOSFETS
    TOKUNAGA, K
    STURM, JC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (10) : 2413 - 2415
  • [34] The Silicon Nanowire Accumulation-Mode MOSFETs
    Wu, Jian
    Garg, Pranav
    Fonash, Stephen J.
    THIN FILM TRANSISTORS 10 (TFT 10), 2010, 33 (05): : 23 - 30
  • [35] Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations
    Kuroda, R.
    Teramoto, A.
    Cheng, W.
    Sugawa, S.
    Ohmi, T.
    2007 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 2007, : 47 - +
  • [36] A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs
    Munteanu, D.
    Moreau, M.
    Autran, J. L.
    MOLECULAR SIMULATION, 2009, 35 (06) : 491 - 497
  • [37] A Two-Dimensional Numerical Analysis of Subthreshold Performances for Double-Gate GaN-MESFETs
    Lakhdar, N.
    Djeffal, F.
    Dibi, Z.
    2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, 1292 : 173 - 176
  • [38] Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs
    靳晓诗
    刘溪
    吴美乐
    揣荣岩
    Jung-Hee Lee
    Jong-Ho Lee
    Journal of Semiconductors, 2012, (12) : 27 - 30
  • [39] Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs
    Jin Xiaoshi
    Liu Xi
    Wu Meile
    Chuai Rongyan
    Jung-Hee Lee
    Jong-Ho Lee
    JOURNAL OF SEMICONDUCTORS, 2012, 33 (12)
  • [40] A unified analytical continuous current model applicable to accumulation mode (junctionless) and inversion mode MOSFETs with symmetric and asymmetric double-gate structures
    Jin, Xiaoshi
    Liu, Xi
    Wu, Meile
    Chuai, Rongyan
    Lee, Jung-Hee
    Lee, Jong-Ho
    SOLID-STATE ELECTRONICS, 2013, 79 : 206 - 209
12345