High quality epitaxial CoSi2 using plasma nitridation-mediated epitaxy:: The effects of the capping layer

被引：3

作者：

Lee, Han-Bo-Ram ^{[1
]}

Gu, Gil Ho ^{[1
]}

Son, J. Y. ^{[1
]}

Park, C. G. ^{[1
]}

Kim, Hyungjun ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2805649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial growth of CoSi2 from Co with a Ti capping layer using plasma nitridation-mediated epitaxy (PNME) was demonstrated. By exposing the Si substrate to the NH3 plasma, an a-SiNx layer was formed with atomic scale thickness controllability. After Co and Ti deposition followed by annealing, high quality epitaxial CoSi2 was formed on Si(001) with a perfectly flat interface. However, the epitaxial growth was observed for Co with a Ti capping layer prepared only by ex situ deposition, not by in situ deposition. The epitaxial CoSi2 was analyzed by x-ray diffraction and a scanning transmission electron microscope. Based on these results, the mechanism of PNME and the effects of the Ti capping layer process on silicidation were discussed.(C) 2007 American Institute of Physics.

引用

页数：5

共 45 条

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