High quality epitaxial CoSi2 using plasma nitridation-mediated epitaxy:: The effects of the capping layer

被引：3

作者：

Lee, Han-Bo-Ram ^{[1
]}

Gu, Gil Ho ^{[1
]}

Son, J. Y. ^{[1
]}

Park, C. G. ^{[1
]}

Kim, Hyungjun ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2805649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial growth of CoSi2 from Co with a Ti capping layer using plasma nitridation-mediated epitaxy (PNME) was demonstrated. By exposing the Si substrate to the NH3 plasma, an a-SiNx layer was formed with atomic scale thickness controllability. After Co and Ti deposition followed by annealing, high quality epitaxial CoSi2 was formed on Si(001) with a perfectly flat interface. However, the epitaxial growth was observed for Co with a Ti capping layer prepared only by ex situ deposition, not by in situ deposition. The epitaxial CoSi2 was analyzed by x-ray diffraction and a scanning transmission electron microscope. Based on these results, the mechanism of PNME and the effects of the Ti capping layer process on silicidation were discussed.(C) 2007 American Institute of Physics.

引用

页数：5

共 45 条

[21] Epitaxial growth of a (100) CoSi2 layer from carbonic cobalt films deposited on (100) Si substrate using an organometallic source
Rhee, HS
Jang, TW
Ahn, BT
APPLIED PHYSICS LETTERS, 1999, 74 (07) : 1003 - 1005
[22] Application of a two-step growth to the formation of epitaxial CoSi2 films on Si(001) surfaces:: Comparative study using reactive deposition epitaxy
Hayashi, Y
Katoh, T
Ikeda, H
Sakai, A
Zaima, S
Yasuda, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (01): : 269 - 275
[23] Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer
Shin, DO
Ban, SH
Ahn, YS
Lee, YS
Lee, NE
Shim, KH
THIN SOLID FILMS, 2004, 458 (1-2) : 269 - 273
[24] CoSi2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation
Lim, C.W.
Greene, J.E.
Petrov, I.
Journal of Applied Physics, 2006, 100 (01):
[25] CoSi2 growth on Si(001) by reactive deposition epitaxy:: Effects of high-flux, low-energy ion irradiation
Lim, C. W.
Greene, J. E.
Petrov, I.
JOURNAL OF APPLIED PHYSICS, 2006, 100 (01)
[26] High-quality growth of AlN epitaxial layer by plasma-assisted molecular-beam epitaxy
Jeganathan, Kulandaivel
Kitamura, Toshio
Shimizu, Mitsuaki
Okumura, Hajime
Japanese Journal of Applied Physics, Part 2: Letters, 2002, 41 (1 A/B):
[27] High-quality growth of AlN epitaxial layer by plasma-assisted molecular-beam epitaxy
Jeganathan, K
Kitamura, T
Shimizu, M
Okumura, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (1AB): : L28 - L30
[28] STRUCTURE AND DEFECT CHARACTERIZATION OF EPITAXIAL COSI2 ON SI(001) FORMED USING AN AMORPHOUS CO75W25 SPUTTERED LAYER
LAVIA, F
SPINELLA, C
READER, AH
DUCHATEAU, JPWB
HAKVOORT, RA
VANVEEN, A
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (05): : 1807 - 1814
[29] In situ growth of an epitaxial CoSi2 layer on a Si(100) substrate by reactive chemical-vapor deposition using a cobalt metallorganic source
Rhee, HS
Ahn, BT
APPLIED PHYSICS LETTERS, 1999, 74 (21) : 3176 - 3178
[30] Formation and properties of epitaxial CoSi2 layers on p-Si0.83Ge0.17/p-Si(001) using a Si capping layer by metal-organic chemical vapor deposition
Lee, N.-E. (nelee@skku.edu), 1600, Japan Society of Applied Physics (42):

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