Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy

被引：0
|
作者：
Nemec, H
Pashkin, A
Kuzel, P
Khazan, M
Schnüll, S
Wilke, I
机构：
[1] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic
[2] Acad Sci Czech Republ, Ctr Mol Syst & Biomol, Prague 18221 8, Czech Republic
[3] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 03期
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ultrafast dynamics of free carriers in low-temperature grown GaAs was studied using time-domain terahertz emission spectroscopy. The subpicosecond free-carrier lifetime was determined for a set of annealed samples with different growth temperatures (175-250 degreesC), the carrier mobility was also estimated. The influence of the growth temperature on the ultrafast carrier trapping is discussed. (C) 2001 American Institute of Physics.
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页码：1303 / 1306
页数：4
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